Design for Reliability and Common Failure Mechanisms in Vertical Cavity Surface Emitting Lasers

2012 ◽  
Vol 1432 ◽  
Author(s):  
Robert W. Herrick

ABSTRACTVertical-Cavity Surface-Emitting Lasers are making up a large and growing share of the world’s production of semiconductor lasers. But the 850 nm GaAs quantum well VCSELs that make up most of present product are highly vulnerable to dislocation networks. In this paper, we discuss how materials selection affects the reliability of semiconductor lasers generally. We then describe the most common failure mechanisms observed in VCSELs, and what precautions are used to prevent them. We finish with a brief discussion of reliability testing and failure analysis.

2011 ◽  
Vol 110-116 ◽  
pp. 3364-3370
Author(s):  
Xin Zhi Shi ◽  
Chang Qi ◽  
Gao Feng Wang ◽  
Ji Cheng Hu ◽  
Feng Liu

Vertical-Cavity Surface-Emitting Lasers (VCSELs) are a new generation of semiconductor lasers that have many advantages. In this paper, we present a comprehensive circuit-level VCSEL model that addresses the spatial and thermal behavior of VCSELs including turn on delay based on the rate equations without sacrificing the numerical efficiency demanded by the circuit-level simulation of optoelectronic systems. It is implemented into SPICE-like simulators to simulate the dc, ac and transient features (including turn-on delay and turn-off effect) of VCSELs. The simulated results exhibit good agreements with references.


Author(s):  
С.А. Блохин ◽  
Н.А. Малеев ◽  
М.А. Бобров ◽  
А.Г. Кузьменков ◽  
А.В. Сахаров ◽  
...  

AbstractThe main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.


1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-3 ◽  
Author(s):  
J. Jacquet ◽  
P. Salet ◽  
A. Plais ◽  
F. Brillouet ◽  
E. Derouin ◽  
...  

1993 ◽  
Vol 29 (5) ◽  
pp. 466 ◽  
Author(s):  
K.D. Choquette ◽  
N. Tabatabaie ◽  
R.E. Leibenguth

1993 ◽  
Vol 29 (10) ◽  
pp. 918-919 ◽  
Author(s):  
P. Ressel ◽  
H. Strusny ◽  
S. Gramlich ◽  
U. Zeimer ◽  
J. Sebastian ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document