Electronic states in an infinite one-dimensional random binary quantum wire in the presence of electric field

2007 ◽  
Author(s):  
E. Faizabadi
2021 ◽  
Vol 104 (19) ◽  
Author(s):  
K. Asada ◽  
T. Miyamoto ◽  
H. Yamakawa ◽  
J. Hirata ◽  
N. Takamura ◽  
...  

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1827-1830 ◽  
Author(s):  
G. J. VÁZQUEZ ◽  
C. AVENDAÑO ◽  
J. A. REYES ◽  
M. DEL CASTILLO-MUSSOT ◽  
H. SPECTOR

We calculate the states of a one-dimensional hydrogen atom under the effect of an electric field (Stark effect) in the strong field regime being the field confined in a finite region of width 2a (capacitor region). We find numerically the solution inside the capacitor and match it to an analytical solution outside the capacitor. Although the electric field tends to separate the two opposite charges particles, the total energy of the system decreases with increasing electric field strength. Our results are useful as a guideline to study strong electric field effects in electronic states of impurities or excitons in 1D systems.


2005 ◽  
Vol 7 ◽  
pp. 101-101 ◽  
Author(s):  
J E Ortega ◽  
M Ruiz-Osés ◽  
J Cordón ◽  
A Mugarza ◽  
J Kuntze ◽  
...  

2019 ◽  
Vol 26 (02) ◽  
pp. 1850144 ◽  
Author(s):  
ARAFA H. ALY ◽  
AHMED NAGATY ◽  
Z. KHALIFA

We have theoretically obtained the transmittance properties of one-dimensional phononic crystals incorporating a piezoelectric material as a defect layer. We have used the transfer matrix method in our analysis with/without defect materials. By increasing the thickness of the defect layer, we obtained a sharp peak created within the bandgap, that indicates to the significance of defect layer thickness on the band structure. The localized modes and a particular intensity estimated within the bandgap depend on the piezoelectric material properties. By applying different quantities of an external electric field, the position of the peak shifts to different frequencies. The electric field induces a relative change in the piezoelectric thickness. Our structure may be very useful in some applications such as sensors, acoustic switches, and energy applications.


1996 ◽  
Vol 54 (3) ◽  
pp. 1936-1946 ◽  
Author(s):  
S. Das Sarma ◽  
E. H. Hwang

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