AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range

2010 ◽  
Author(s):  
P. E. Malinowski ◽  
J.-Y. Duboz ◽  
J. John ◽  
C. Sturdevant ◽  
J. Das ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Backside Illuminated

Use Of Thinned Backside Illuminated CCD From The Extreme Ultraviolet To The Soft Ultraviolet.

1989 ◽  
Author(s):  
J. F. Hochedez ◽  
P Lemaire ◽  
J P. Delaboudiniere ◽  
B Cougrand ◽  
J Barba
Keyword(s):  
Extreme Ultraviolet ◽  
Backside Illuminated

Characterization of Backside-Illuminated CMOS APS Prototypes for the Extreme Ultraviolet Imager On-Board Solar Orbiter

2013 ◽  
Vol 60 (5) ◽  
pp. 1701-1708 ◽  
Author(s):  
Ali BenMoussa ◽  
Boris Giordanengo ◽  
Samuel Gissot ◽  
Guy Meynants ◽  
Xinyang Wang ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Backside Illuminated

Irradiation Damage Tests on Backside-Illuminated CMOS APS Prototypes for the Extreme Ultraviolet Imager On-Board Solar Orbiter

2013 ◽  
Vol 60 (5) ◽  
pp. 3907-3914 ◽  
Author(s):  
A. BenMoussa ◽  
S. Gissot ◽  
B. Giordanengo ◽  
G. Meynants ◽  
X. Wang ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Irradiation Damage ◽  
Backside Illuminated

Plasma-based sources of extreme ultraviolet radiation for lithography and mask inspection

2018 ◽  
Vol 189 (03) ◽  
pp. 323-334 ◽  
Author(s):  
D.B. Abramenko ◽  
P.S. Antsiferov ◽  
D.I. Astakhov ◽  
Aleksandr Yu. Vinokhodov ◽  
Il'ya Yu. Vichev ◽  
...  
Keyword(s):  
Ultraviolet Radiation ◽  
Extreme Ultraviolet ◽  
Mask Inspection ◽  
Extreme Ultraviolet Radiation

Correlation of Electronic and Thermal Properties of Short Channel nMOSFETS

1999 ◽  
Author(s):  
M. Palaniappan ◽  
V. Ng ◽  
R. Heiderhoff ◽  
J.C.H. Phang ◽  
G.B.M. Fiege ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Temperature Distribution ◽  
Heat Generation ◽  
Hot Spots ◽  
Light Emission ◽  
Photon Emission ◽  
Thermal Image ◽  
Short Channel ◽  
Physical Phenomena ◽  
Backside Illuminated

Abstract Light emission and heat generation of Si devices have become important in understanding physical phenomena in device degradation and breakdown mechanisms. This paper correlates the photon emission with the temperature distribution of a short channel nMOSFET. Investigations have been carried out to localize and characterize the hot spots using a spectroscopic photon emission microscope and a scanning thermal microscope. Frontside investigations have been carried out and are compared and discussed with backside investigations. A method has been developed to register the backside thermal image with the backside illuminated image.

Equipment for Subpicosecond Extreme Ultraviolet Facility.

1986 ◽  
Author(s):  
Charles K. Rhodes ◽  
Keith Boyer ◽  
Tsing Shan Luk
Keyword(s):  
Extreme Ultraviolet
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