Infrared Study Of Excimer Laser Induced Surface Modification Of Kapton

Author(s):  
S. Mihailov ◽  
W. Duley

1992 ◽  
Vol 54 ◽  
pp. 345-348 ◽  
Author(s):  
A. Jadin ◽  
M. Wautelet ◽  
L.D. Laude


Author(s):  
Kaoru Igarashi ◽  
Hideaki Saito ◽  
Tomoo Fujioka ◽  
Satoru Fujitsu ◽  
Kunihito Koumoto ◽  
...  




2009 ◽  
Vol 256 (3) ◽  
pp. 857-861 ◽  
Author(s):  
Piotr Rytlewski ◽  
Marian Żenkiewicz




2012 ◽  
Vol 212 (8) ◽  
pp. 1700-1704 ◽  
Author(s):  
Piotr Rytlewski ◽  
Waldemar Mróz ◽  
Marian Żenkiewicz ◽  
Joanna Czwartos ◽  
Bogusław Budner


1993 ◽  
Vol 334 ◽  
Author(s):  
T. Miyokawa ◽  
M. Okoshi ◽  
K. Toyoda ◽  
M. Murahara

AbstractSilicon films were deposited on a fluororesin surface. The process was divided into two steps: surface modification process and silicon CVD onto the modified parts. In the modification process, SiH4 and B(CH3)3 mixed gases were used with ArF excimer laser. Fluorine atoms of the surface were pulled out by boron atoms which were photo—dissociated from B(CH3)3 and were replaced with silicon atoms released from SiH4. In the CVD process, SiH4 gas was used with high—density excited ArF excimer laser. Silicon films were deposited onto the nuclei by photodecomposition of SiH4.Chemical compositions of the modified layers and the deposited parts were inspected by XPS analysis. 1000 Å thickness of the deposited silicon films was confirmed by the surface roughness interference–meter.



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