Amorphous Silicon Alloy Thin Film Transistor Operation With High Field Effect Mobility

1986 ◽  
Author(s):  
M. Shur ◽  
C. Hyun ◽  
M. Hack ◽  
W. Czubatyj
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Field Effect ◽  
High Field ◽  
Thin Film Transistor ◽  
Alloy Thin Film ◽  
Field Effect Mobility ◽  
Silicon Alloy

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

High Field Effect Mobility, Amorphous In-Ga-Sn-O Thin-Film Transistor With No Effect of Negative Bias Illumination Stress

2019 ◽  
Vol 40 (9) ◽  
pp. 1443-1446
Author(s):  
Jiseob Lee ◽  
Dongjin Kim ◽  
Suhui Lee ◽  
Johann Cho ◽  
Hyungryul Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Field ◽  
Thin Film Transistor ◽  
Negative Bias ◽  
Field Effect Mobility ◽  
Negative Bias Illumination Stress

Diazapentacene Derivatives as Thin-Film Transistor Materials: Morphology Control in Realizing High-Field-Effect Mobility

2009 ◽  
Vol 1 (9) ◽  
pp. 2071-2079 ◽  
Author(s):  
Shou-Zheng Weng ◽  
Paritosh Shukla ◽  
Ming-Yu Kuo ◽  
Yu-Chang Chang ◽  
Hwo-Shuenn Sheu ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Field ◽  
Thin Film Transistor ◽  
Morphology Control ◽  
Field Effect Mobility

N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

2002 ◽  
Vol 80 (14) ◽  
pp. 2517-2519 ◽  
Author(s):  
Patrick R. L. Malenfant ◽  
Christos D. Dimitrakopoulos ◽  
Jeffrey D. Gelorme ◽  
Laura L. Kosbar ◽  
Teresita O. Graham ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Field ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Organic Thin Film Transistor
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