Crystalline graphite oxide/PVDF nanocomposite gate dielectric: Low-voltage and high field effect mobility thin-film transistor

2012 ◽  
Vol 210 (3) ◽  
pp. 546-552 ◽  
Author(s):  
J. Sannigrahi ◽  
D. Bhadra ◽  
B. K. Chaudhuri
Keyword(s):  
Thin Film ◽  
Graphite Oxide ◽  
Field Effect ◽  
High Field ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Crystalline Graphite

High Field Effect Mobility, Amorphous In-Ga-Sn-O Thin-Film Transistor With No Effect of Negative Bias Illumination Stress

2019 ◽  
Vol 40 (9) ◽  
pp. 1443-1446
Author(s):  
Jiseob Lee ◽  
Dongjin Kim ◽  
Suhui Lee ◽  
Johann Cho ◽  
Hyungryul Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Field ◽  
Thin Film Transistor ◽  
Negative Bias ◽  
Field Effect Mobility ◽  
Negative Bias Illumination Stress

Diazapentacene Derivatives as Thin-Film Transistor Materials: Morphology Control in Realizing High-Field-Effect Mobility

2009 ◽  
Vol 1 (9) ◽  
pp. 2071-2079 ◽  
Author(s):  
Shou-Zheng Weng ◽  
Paritosh Shukla ◽  
Ming-Yu Kuo ◽  
Yu-Chang Chang ◽  
Hwo-Shuenn Sheu ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Field ◽  
Thin Film Transistor ◽  
Morphology Control ◽  
Field Effect Mobility

N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

2002 ◽  
Vol 80 (14) ◽  
pp. 2517-2519 ◽  
Author(s):  
Patrick R. L. Malenfant ◽  
Christos D. Dimitrakopoulos ◽  
Jeffrey D. Gelorme ◽  
Laura L. Kosbar ◽  
Teresita O. Graham ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Field ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Organic Thin Film Transistor

scholarly journals USING PERCOLATIVE CRYSTALLINE 0.3 CUO/PVDF NANOCOMPOSITE GATE DIELECTRIC FOR FABRICATING HIGH-EFFECT MOBILITY THIN FILM TRANSISTOR OPERATING AT LOW VOLTAGE

2021 ◽  
Vol 9 (11) ◽  
pp. 1095-1101
Author(s):  
Debabrata Bhadra ◽  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Thin Film Transistor ◽  
Dielectric Constants ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Capacitance Density

Thin-film transistor (TFT) with various layers of crystalline Poly-vinylidene fluoride (PVDF)/CuO percolative nanocomposites based on Anthracene as a gate dielectric insulator have been fabricated. A device with excellent electrical characteristics at low operating voltages (<1V) has been designed. Different layers (L) of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constants (εr). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films have been investigated. This device was showed highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of -1.6V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such a High-ε three layered (3L) PVDF/CuO gate dielectric appears to be highly promising candidates for organic non-volatile memory, sensor and field-effect transistors (FETs).

High Field-Effect Mobility Two-Channel InGaZnO Thin-Film Transistors for Low-Voltage Operation

2021 ◽  
pp. 1-5
Author(s):  
Kwang-Ro Yun ◽  
Hwa-Seub Lee ◽  
Jong-Ho Kim ◽  
Tae-Ju Lee ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Field ◽  
Low Voltage ◽  
Field Effect Mobility ◽  
Low Voltage Operation
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