SU-E-T-165: Characterization of Dose Distributions in High-Dose-Rate Surface Brachytherapy

2015 ◽  
Vol 42 (6Part14) ◽  
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Author(s):  
I Buzurovic ◽  
J Hansen ◽  
M Bhagwat ◽  
D O'Farrell ◽  
A Damato ◽  
...  
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Rosa Fabregat‐Borrás ◽  
Eduardo Rodríguez ◽  
Manuel Fernández‐Montes ◽  
Mercedes Pérez‐Macho ◽  
...  

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M. Borroni ◽  
C. Cavatorta ◽  
A. Cerrotta ◽  
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...  

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A Robinson ◽  
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B Thomadsen

1996 ◽  
Vol 34 (1) ◽  
pp. 173-181 ◽  
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Mark W. Skwarchuk ◽  
Timothy G. Ochran ◽  
Ritsuko Komaki ◽  
Jackson Cundiff ◽  
Elizabeth L. Travis

1985 ◽  
Vol 45 ◽  
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...  

ABSTRACTSome renarks about the mechanism for dynamic annealing during high dose rate P implantation of Si are reported. TEM observations and RBS channeling measurements show that the ion bombardment enhances the amorphous to crystalline transformation in the temperature range 200 ≤ T ≤ 600°C. It is found that the ratio between the observed recrystalli-zation velocity and the thermal SPE velocity decreases with increasing temperature. This indicates that a transition temperature must exist between the ion-assisted recrystallization regime and the ?lermal SPE regime. For the energy (100 keV) and the dose rate (60,uA/cm2) used in our experiments the transition temperature is about 700°C.


2016 ◽  
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C. Candela-Juan ◽  
Y. Niatsetski ◽  
R. van der Laarse ◽  
D. Granero ◽  
F. Ballester ◽  
...  

1995 ◽  
Vol 31 (1) ◽  
pp. 165-170 ◽  
Author(s):  
Elizabeth Gore ◽  
Michael T. Gillin ◽  
Katherine Albano ◽  
Beth Erickson

2019 ◽  
Vol 58 ◽  
pp. 1-7 ◽  
Author(s):  
Zulaikha Jamalludin ◽  
Wei Loong Jong ◽  
Rozita Abdul Malik ◽  
Anatoly Rosenfeld ◽  
Ngie Min Ung

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