A Correlation Model of Binaural Masking Level Differences

1971 ◽  
Vol 50 (6B) ◽  
pp. 1494-1511 ◽  
Author(s):  
Eli Osman
Keyword(s):  
1983 ◽  
Vol 27 ◽  
Author(s):  
D.E. Aspnes ◽  
K.K. Tiong ◽  
P.M. Amirtharaj ◽  
F.H. Pollak

ABSTRACTThe red shift and asymmetric broadening of the LO phonon mode of ion-implanted GaAs are both described quantitatively by a spatial correlation model based on a damage-induced relaxation of the momentum selection rule previously used by Richter, Wang, and Ley to describe similar effects in microcrystalline Si. The success of the model for a qualitatively different disorder microstructure suggests it may be possible to evaluate average sizes of crystallographically perfect regions in semiconductors from the phonon lineshapes of their Raman spectra.


2002 ◽  
Vol 42 (19) ◽  
pp. 2295-2310 ◽  
Author(s):  
Greg A. Woodbury ◽  
Rick van der Zwan ◽  
William G. Gibson

2009 ◽  
Vol 27 (2) ◽  
pp. 340-349 ◽  
Author(s):  
Elena Soto ◽  
Sebastian Haertter ◽  
Michael Koenen-Bergmann ◽  
Alexander Staab ◽  
Iñaki F. Trocóniz

Statistics ◽  
1990 ◽  
Vol 21 (3) ◽  
pp. 433-436 ◽  
Author(s):  
Stute Wlhfkied

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