Spatial Correlation Interpretation of Effects of As+ Implantation on the Raman Spectra of GaAs
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ABSTRACTThe red shift and asymmetric broadening of the LO phonon mode of ion-implanted GaAs are both described quantitatively by a spatial correlation model based on a damage-induced relaxation of the momentum selection rule previously used by Richter, Wang, and Ley to describe similar effects in microcrystalline Si. The success of the model for a qualitatively different disorder microstructure suggests it may be possible to evaluate average sizes of crystallographically perfect regions in semiconductors from the phonon lineshapes of their Raman spectra.
2014 ◽
Vol 989-994
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pp. 2204-2207
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2017 ◽
Vol 107
(6)
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pp. 2809-2820
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2018 ◽
Vol 48
(6)
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pp. 642-649
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2019 ◽
Vol 151
(2)
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pp. 024104
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2017 ◽
Vol 25
(2)
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pp. 310-319
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2017 ◽
Vol 23
(3)
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pp. 461-475
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