scholarly journals Efficient ultrafast all-optical modulation in a nonlinear crystalline gallium phosphide nanodisk at the anapole excitation

2020 ◽  
Vol 6 (34) ◽  
pp. eabb3123 ◽  
Author(s):  
Gustavo Grinblat ◽  
Haizhong Zhang ◽  
Michael P. Nielsen ◽  
Leonid Krivitsky ◽  
Rodrigo Berté ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Optical Switching ◽  
Near Infrared ◽  
High Refractive Index ◽  
Photon Absorption ◽  
Optical Modulation ◽  
Infrared Range ◽  
Two Photon Absorption ◽  
All Optical ◽  
Differential Reflectivity

High–refractive index nanostructured dielectrics have the ability to locally enhance electromagnetic fields with low losses while presenting high third-order nonlinearities. In this work, we exploit these characteristics to achieve efficient ultrafast all-optical modulation in a crystalline gallium phosphide (GaP) nanoantenna through the optical Kerr effect (OKE) and two-photon absorption (TPA) in the visible/near-infrared range. We show that an individual GaP nanodisk can yield differential reflectivity modulations of up to ~40%, with characteristic modulation times between 14 and 66 fs, when probed at the anapole excitation (AE). Numerical simulations reveal that the AE represents a unique condition where both the OKE and TPA contribute with the same modulation sign, maximizing the response. These findings highly outperform previous reports on sub–100-fs all-optical switching from resonant nanoscale dielectrics, which have demonstrated modulation depths no larger than 0.5%, placing GaP nanoantennas as a promising choice for ultrafast all-optical modulation at the nanometer scale.

scholarly journals Ultrafast sub–30-fs all-optical switching based on gallium phosphide

2019 ◽  
Vol 5 (6) ◽  
pp. eaaw3262 ◽  
Author(s):  
Gustavo Grinblat ◽  
Michael P. Nielsen ◽  
Paul Dichtl ◽  
Yi Li ◽  
Rupert F. Oulton ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Optical Switching ◽  
Near Infrared ◽  
Optical Nonlinearity ◽  
Photon Absorption ◽  
Linear Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
All Optical ◽  
All Optical Switching

Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (λ > 450 nm) and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub–30-fs (full width at half maximum) transmission modulation of up to ~70% in the 600- to 1000-nm wavelength range. Nonlinear simulations using parameters measured by theZ-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Because of the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.

scholarly journals All-optical modulation using two-photon absorption in silicon core optical fibers

2011 ◽  
Vol 19 (20) ◽  
pp. 19078 ◽  
Author(s):  
P. Mehta ◽  
N. Healy ◽  
T. D. Day ◽  
J. R. Sparks ◽  
P. J. A. Sazio ◽  
...  
Keyword(s):  
Optical Fibers ◽  
Photon Absorption ◽  
Optical Modulation ◽  
Two Photon Absorption ◽  
Two Photon ◽  
All Optical

scholarly journals All-optical-switching demonstration using two-photon absorption and the Zeno effect

2013 ◽  
Vol 87 (2) ◽  
Author(s):  
S. M. Hendrickson ◽  
C. N. Weiler ◽  
R. M. Camacho ◽  
P. T. Rakich ◽  
A. I. Young ◽  
...  
Keyword(s):  
Optical Switching ◽  
Photon Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Zeno Effect ◽  
All Optical ◽  
All Optical Switching

Two-photon absorption as a limitation to all-optical switching

1989 ◽  
Vol 14 (20) ◽  
pp. 1140 ◽  
Author(s):  
Victor Mizrahi ◽  
M. A. Saifi ◽  
M. J. Andrejco ◽  
K. W. DeLong ◽  
G. I. Stegeman
Keyword(s):  
Optical Switching ◽  
Photon Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
All Optical ◽  
All Optical Switching

scholarly journals Third-Order Nonlinear Spectrum of GaN under Femtosecond-Pulse Excitation from the Visible to the Near Infrared

Photonics ◽  
2019 ◽  
Vol 6 (2) ◽  
pp. 69 ◽  
Author(s):  
Gustavo F. B. Almeida ◽  
Sabrina N. C. Santos ◽  
Jonathas P. Siqueira ◽  
Jessica Dipold ◽  
Tobias Voss ◽  
...  
Keyword(s):  
Optical Switching ◽  
Near Infrared ◽  
Laser Pulses ◽  
Photonic Devices ◽  
Femtosecond Laser Pulses ◽  
Index Of Refraction ◽  
Photon Absorption ◽  
Pulse Excitation ◽  
Two Photon Absorption ◽  
Two Photon Absorption Coefficient

Gallium nitride (GaN) has been established as a promising candidate for integrated electro-optic and photonic devices, aiming at applications from optical switching to signal processing. Studies of its optical nonlinearities, however, lack spectral coverage, especially in the telecommunications range. In this study, we measured the two-photon absorption coefficient (β) and the nonlinear index of refraction (n2) of GaN from the visible to the near-infrared by using femtosecond laser pulses. We observed an increase of β from (1.0 ± 0.2) to (2.9 ± 0.6) ×10−11 m/W as the photon energy approached the band gap from 1.77 up to 2.25 eV (700–550 nm), while n2 varied from (90 ± 30) ×10−20 up to (265 ± 80) ×10−20 m2/W within a broad spectral range, from 0.80 up to 2.25 eV (1550–550 nm). The results were modeled by applying a theory based on the second-order perturbation theory and the Kramers-Kronig relationship for direct-gap semiconductors, which are important for the development of GaN-based nonlinear photonic devices.

Two-photon absorption and all-optical modulation in germanium-on-silicon waveguides for the mid-infrared

2015 ◽  
Vol 40 (10) ◽  
pp. 2213 ◽  
Author(s):  
Li Shen ◽  
Noel Healy ◽  
Colin J. Mitchell ◽  
Jordi Soler Penades ◽  
Milos Nedeljkovic ◽  
...  
Keyword(s):  
Photon Absorption ◽  
Optical Modulation ◽  
Mid Infrared ◽  
Silicon Waveguides ◽  
Two Photon Absorption ◽  
Two Photon ◽  
All Optical
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