Continuous Random Network Model for Amorphous Solid Water

Science ◽  
1975 ◽  
Vol 187 (4175) ◽  
pp. 430-432 ◽  
Author(s):  
R. Alben ◽  
P. Boutron
1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.


2003 ◽  
Vol 118 (1) ◽  
pp. 364-372 ◽  
Author(s):  
Z. Dohnálek ◽  
Greg A. Kimmel ◽  
Patrick Ayotte ◽  
R. Scott Smith ◽  
Bruce D. Kay

2011 ◽  
Vol 13 (6) ◽  
pp. 2172-2178 ◽  
Author(s):  
M. Chehrouri ◽  
J.-H. Fillion ◽  
H. Chaabouni ◽  
H. Mokrane ◽  
E. Congiu ◽  
...  

2018 ◽  
Vol 122 (42) ◽  
pp. 24164-24170 ◽  
Author(s):  
Du Hyeong Lee ◽  
Heon Kang

2007 ◽  
Vol 126 (18) ◽  
pp. 181103 ◽  
Author(s):  
Takahiro Kondo ◽  
Hiroyuki S. Kato ◽  
Mischa Bonn ◽  
Maki Kawai

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