A silicon Brillouin laser

Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are markedly weak in conventional silicon photonic waveguides, stifling progress toward silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. In this study, we have harnessed these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters a regime of dynamics in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.

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Double-layer graphene on photonic crystal waveguide electro-absorption modulator with 12 GHz bandwidth

Nanophotonics ◽

10.1515/nanoph-2019-0381 ◽

2019 ◽

Vol 9 (8) ◽

pp. 2377-2385 ◽

Cited By ~ 4

Author(s):

Zhao Cheng ◽

Xiaolong Zhu ◽

Michael Galili ◽

Lars Hagedorn Frandsen ◽

Hao Hu ◽

...

Keyword(s):

Photonic Crystal ◽

Double Layer ◽

Slow Light ◽

Modulation Depth ◽

Photonic Crystal Waveguide ◽

Optical Modulators ◽

Layer Graphene ◽

Silicon Photonic ◽

On Chip ◽

Silicon Based

AbstractGraphene has been widely used in silicon-based optical modulators for its ultra-broadband light absorption and ultrafast optoelectronic response. By incorporating graphene and slow-light silicon photonic crystal waveguide (PhCW), here we propose and experimentally demonstrate a unique double-layer graphene electro-absorption modulator in telecommunication applications. The modulator exhibits a modulation depth of 0.5 dB/μm with a bandwidth of 13.6 GHz, while graphene coverage length is only 1.2 μm in simulations. We also fabricated the graphene modulator on silicon platform, and the device achieved a modulation bandwidth at 12 GHz. The proposed graphene-PhCW modulator may have potentials in the applications of on-chip interconnections.

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Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2021.3051802 ◽

2021 ◽

pp. 1-1

Author(s):

George N. Tzintzarov ◽

Adrian Ildefonso ◽

Jeffrey W. Teng ◽

Milad Frounchi ◽

Albert Djikeng ◽

...

Keyword(s):

Photon Absorption ◽

Single Event ◽

Two Photon Absorption ◽

Two Photon ◽

Single Event Transients ◽

Silicon Photonic ◽

Photonic Waveguides

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Silicon photonic devices for mid-infrared applications

Nanophotonics ◽

10.1515/nanoph-2013-0027 ◽

2014 ◽

Vol 3 (4-5) ◽

pp. 329-341 ◽

Cited By ~ 19

Author(s):

Raji Shankar ◽

Marko Lončar

Keyword(s):

Gas Sensing ◽

Wavelength Region ◽

Photonic Devices ◽

Ring Resonators ◽

Space Communications ◽

Mid Infrared ◽

Silicon Photonic ◽

Processing Techniques ◽

Silicon Based

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.

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