Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption

In this paper, a time-variant analysis is made on Single-Event Transients (SETs) in integrated CMOS ring oscillators. The Impulse Sensitive Function (ISF) of the oscillator is used to analyze the impact of the relative moment when a particle hits the circuit. The analysis is based on simulations and verified experimentally with a Two-Photon Absorption (TPA) laser setup. The experiments are done using a 65 nm CMOS test chip.

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A Comparison of Single-Event Transients in Pristine and Irradiated ${{\rm Al}_{0.3}}{{\rm Ga}_{0.7}}{{\rm N}/{\rm GaN}}$ HEMTs using Two-Photon Absorption and Heavy Ions

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2015.2498286 ◽

2015 ◽

Vol 62 (6) ◽

pp. 2743-2751 ◽

Cited By ~ 6

Author(s):

A. Khachatrian ◽

N. J.-H. Roche ◽

S. Buchner ◽

A. D. Koehler ◽

T. J. Anderson ◽

...

Keyword(s):

Heavy Ions ◽

Photon Absorption ◽

Single Event ◽

Two Photon Absorption ◽

Two Photon ◽

Single Event Transients

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A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2014.2369006 ◽

2014 ◽

Vol 61 (6) ◽

pp. 3416-3423 ◽

Cited By ~ 16

Author(s):

Ani Khachatrian ◽

Nicolas J.-H. Roche ◽

Dale McMorrow ◽

Jeffrey H. Warner ◽

Stephen P. Buchner ◽

...

Keyword(s):

Photon Absorption ◽

Single Event ◽

Single Event Effects ◽

Two Photon Absorption ◽

Two Photon

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Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

Materials ◽

10.3390/ma12203411 ◽

2019 ◽

Vol 12 (20) ◽

pp. 3411 ◽

Cited By ~ 1

Author(s):

Cheng Gu ◽

Rui Chen ◽

George Belev ◽

Shuting Shi ◽

Haonan Tian ◽

...

Keyword(s):

Laser System ◽

Pulsed Laser ◽

Photon Absorption ◽

Testing System ◽

Single Event ◽

Single Event Effects ◽

Two Photon Absorption ◽

Two Photon ◽

Sram Cell ◽

Sensitivity Map

Single-event effects (SEEs) in integrated circuits and devices can be studied by utilizing ultra-fast pulsed laser system through Two Photon Absorption process. This paper presents technical ways to characterize key factors for laser based SEEs mapping testing system: output power from laser source, spot size focused by objective lens, opening window of Pockels cell, and calibration of injected laser energy. The laser based SEEs mapping testing system can work in a stable and controllable status by applying these methods. Furthermore, a sensitivity map of a Static Random Access Memory (SRAM) cell with a 65 nm technique node was created through the established laser system. The sensitivity map of the SRAM cell was compared to a map generated by a commercial simulation tool (TFIT), and the two matched well. In addition, experiments in this paper also provided energy distribution profile along Z axis that is the direction of the pulsed laser injection and threshold energy for different SRAM structures.

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