single event transients Recently Published Documents

10.1109/tns.2022.3140245 ◽

2022 ◽

pp. 1-1

Author(s):

George N. Tzintzarov ◽

Jeffrey W. Teng ◽

Amanda N. Bozovich ◽

Gregory R. Allen ◽

Delgermaa Nergui ◽

...

Keyword(s):

Single Event ◽

Single Event Transients ◽

Silicon Photonic

Characterization of the Total Charge and Time Duration for Single-Event Transients Voltage Pulses in a 65 nm CMOS Technology

10.1109/tns.2022.3141070 ◽

2022 ◽

pp. 1-1

Author(s):

Zheyi Li ◽

Laurent Berti ◽

Jan Wouters ◽

Jialei Wang ◽

Paul Leroux

Keyword(s):

Cmos Technology ◽

Total Charge ◽

Single Event ◽

Time Duration ◽

Single Event Transients ◽

Voltage Pulses

Low-Cost Sequential Logic Circuit Design Considering Single Event Double-Node Upsets and Single Event Transients

10.1109/iccd53106.2021.00038 ◽

2021 ◽

Author(s):

Ramin Rajaei ◽

Michael Niemier ◽

Xiaobo Sharon Hu

Keyword(s):

Circuit Design ◽

Low Cost ◽

Logic Circuit ◽

Single Event ◽

Single Event Transients ◽

Sequential Logic

Sub-10 MeV proton-induced single-event transients in 65 nm CMOS inverter chains

Microelectronics Reliability ◽

10.1016/j.microrel.2021.114366 ◽

2021 ◽

Vol 125 ◽

pp. 114366

Author(s):

Zhenyu Wu ◽

Yaqing Chi ◽

Jianjun Chen ◽

Pengcheng Huang ◽

Bin Liang ◽

...

Keyword(s):

Single Event ◽

Cmos Inverter ◽

Reliability Evaluation of the Count Min Sketch (CMS) against Single Event Transients (SETs)

2021 IEEE 39th VLSI Test Symposium (VTS) ◽

10.1109/vts50974.2021.9441036 ◽

2021 ◽

Author(s):

Jinhua Zhu ◽

Zhen Gao ◽

Jie Jin ◽

Pedro Reviriego

Keyword(s):

Reliability Evaluation ◽

Single Event ◽

Investigating Single Event Transients of Advanced Fin Based Devices for Inclusion in ICs

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2021.153675 ◽

2021 ◽

pp. 153675

Author(s):

Chinmay Dimri ◽

G.P. Nikhil ◽

P.K. Mohanty ◽

K.P. Pradhan ◽

R. Agarwal ◽

...

Keyword(s):

Single Event ◽

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

Impact of negative bias temperature instability on single event transients in scaled logic circuits

10.1002/jnm.2854 ◽

2021 ◽

Author(s):

Ambika Prasad Shah ◽

Michael Waltl

Keyword(s):

Logic Circuits ◽

Negative Bias ◽

Single Event ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

Semiconductor Science and Technology ◽

10.1088/1361-6641/abdba3 ◽

2021 ◽

Author(s):

Khushwant Sehra ◽

Vandana Kumari ◽

Mridula Gupta ◽

Meena Mishra ◽

D. S. Rawal ◽

...

Keyword(s):

Heavy Ion ◽

Single Event ◽

Single Event Transients ◽

Gan Hemts

Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption

10.1109/tns.2021.3051802 ◽

2021 ◽

pp. 1-1

Author(s):

George N. Tzintzarov ◽

Adrian Ildefonso ◽

Jeffrey W. Teng ◽

Milad Frounchi ◽

Albert Djikeng ◽

...

Keyword(s):

Photon Absorption ◽

Single Event ◽

Two Photon Absorption ◽

Two Photon ◽

Single Event Transients ◽

Silicon Photonic ◽

Photonic Waveguides

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

10.1109/tns.2021.3060339 ◽

2021 ◽

pp. 1-1

Author(s):

Kaitlyn L. Ryder ◽

Landen D. Ryder ◽

Andrew L. Sternberg ◽

John A. Kozub ◽

En Xia Zhang ◽

...

Keyword(s):

Pulsed Laser ◽

Heavy Ion ◽

Single Event ◽

Epitaxial Silicon ◽

Charge Generation ◽

X Ray ◽

Silicon Diode ◽

Single Event Transients ◽

Induced Charge