Influence of bismuth doping of InAs quantum-dot layer on the morphology and photoelectronic properties of Gas/InAs heterostructures grown by metal-organic chemical vapor deposition

2001 ◽  
Vol 35 (1) ◽  
pp. 93-98 ◽  
Author(s):  
B. N. Zvonkov ◽  
I. A. Karpovich ◽  
N. V. Baidus’ ◽  
D. O. Filatov ◽  
S. V. Morozov
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