Photo-Sintered Silver Thin Films by a High-Power UV-LED Module for Flexible Electronic Applications

In recent printed electronics technology, a photo-sintering technique using intense pulsed light (IPL) source has attracted attention, instead of conventional a thermal sintering process with long time and high temperature. The key principle of the photo-sintering process is the selective heating of a thin film with large light absorption coefficients, while a transparent substrate does not heat by the IPL source. Most research on photo-sintering has used a xenon flash lamp as a light source. However, the xenon flash lamp requires instantaneous high power and is unsuitable for large area applications. In this work, we developed a new photo-sintering system using a high-power ultraviolet light emitting diode (UV-LED) module. A LED light source has many merits such as low power consumption and potential large-scale application. The silver nanoparticles ink was inkjet-printed on a polyethylene terephthalate (PET) and photo-sintered by the UV-LED module with the wavelength of 365 and 385 nm. The electrical resistivity as low as 5.44 × 10−6 Ω·cm (just about three times compared to value of bulk silver) was achieved at optimized photo-sintering conditions (wavelength of 365 nm and light intensity of 300 mW/cm2).

Xenon Flash Lamp Lift-Off Technology without Laser for Flexible Electronics

This study experimentally investigated process mechanisms and characteristics of newly developed xenon flash lamp lift-off (XF-LO) technology, a novel thin film lift-off method using a light to heat conversion layer (LTHC) and a xenon flash lamp (XFL). XF-LO technology was used to lift-off polyimide (PI) films of 8.68–19.6 μm thickness. When XFL energy irradiated to the LTHC was 2.61 J/cm2, the PI film was completely released from the carrier substrate. However, as the energy intensity of the XFL increased, it became increasingly difficult to completely release the PI film from the carrier substrate. Using thermal gravimetric analysis (TGA), Fourier-transform infrared spectroscopy (FTIR) and transmittance analysis, the process mechanism of XF-LO technology was investigated. Thermal durability of the PI film was found to deteriorate with increasing XFL energy intensity, resulting in structural deformation and increased roughness of the PI film surface. The optimum energy intensity of 2.61 J/cm2 or less was found to be effective for performing XF-LO technology. This study provides an attractive method for manufacturing flexible electronic boards outside the framework of existing laser lift-off (LLO) technology.