Precision Measurements of the Intensity in the Electron Diffraction Analysis

Author(s):  
A. K. Kuligin ◽  
A. S. Avilov
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.


Author(s):  
J. A. Eades

For well over two decades computers have played an important role in electron microscopy; they now pervade the whole field - as indeed they do in so many other aspects of our lives. The initial use of computers was mainly for large (as it seemed then) off-line calculations for image simulations; for example, of dislocation images.Image simulation has continued to be one of the most notable uses of computers particularly since it is essential to the correct interpretation of high resolution images. In microanalysis, too, the computer has had a rather high profile. In this case because it has been a necessary part of the equipment delivered by manufacturers. By contrast the use of computers for electron diffraction analysis has been slow to prominence. This is not to say that there has been no activity, quite the contrary; however it has not had such a great impact on the field.


1991 ◽  
Vol 120 (1) ◽  
pp. 261-270
Author(s):  
T. Stoto ◽  
N. Setter ◽  
P. A. Stadelmann ◽  
Z. G. Ye

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