Electron Energy-Loss Spectroscopy Study of the Change in the Free-Electron Density in Thin Superconducting NbN Films under Ion-Beam Irradiation

2018 ◽  
Vol 63 (2) ◽  
pp. 241-244
Author(s):  
K. E. Prikhodko ◽  
M. M. Dementyeva ◽  
B. A. Gurovich ◽  
D. A. Komarov ◽  
L. V. Kutuzov
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Free Electron ◽  
Ion Beam ◽  
Spectroscopy Study ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Free Electron Density ◽  
Electron Energy Loss

Photoemission and electron-energy-loss-spectroscopy study ofBaRuO3

1995 ◽  
Vol 51 (11) ◽  
pp. 6827-6832 ◽  
Author(s):  
A. Gulino ◽  
R. G. Egdell ◽  
P. D. Battle ◽  
S. H. Kim
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Spectroscopy Study ◽  
Electron Energy Loss

Superlow friction of ta-C lubricated by glycerol: An electron energy loss spectroscopy study

2007 ◽  
Vol 102 (6) ◽  
pp. 064912 ◽  
Author(s):  
L. Joly-Pottuz ◽  
C. Matta ◽  
M. I. de Barros Bouchet ◽  
B. Vacher ◽  
J. M. Martin ◽  
...  
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Spectroscopy Study ◽  
Electron Energy Loss

scholarly journals Electron Energy Loss Spectroscopy Study on the Dielectric Response of Single H2Ti3O7 Nanotube

2009 ◽  
Vol 15 (S2) ◽  
pp. 1218-1219 ◽  
Author(s):  
J Wang ◽  
Q Li ◽  
LM Peng ◽  
M Malac
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Dielectric Response ◽  
Spectroscopy Study ◽  
Electron Energy Loss

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Thickness Measurement of Focused Ion Beam Thinned Silicon Crystals Using Convergent Beam.Electron Diffraction and Electron Energy Loss Spectroscopy.

1999 ◽  
Vol 5 (S2) ◽  
pp. 898-899
Author(s):  
D. Delille ◽  
R. Pantel ◽  
G. Auvert ◽  
E. Van Cappellen
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Energy ◽  
Thickness Measurement ◽  
Crystal Thickness ◽  
Ion Milling ◽  
Electron Energy Loss

1. IntroductionThe FIB (focused ion beam) is now widely accepted as the most site-specific TEM preparation tool and as such proves to be highly valuable when analysing ULSI devices. However, using high-energy Gallium ions for milling induces amorphization of the crystal surfaces. A method able to quantify this surface alteration on silicon using a combination of CBED (convergent beam electron diffraction) and EELS (electron energy loss spectroscopy) is presented. CBED is a powerful tool that also can generate an accurate measure of crystal thickness. EELS can yield the total sample thickness, so from the difference the combined amorphous layers can be assessed. Two sets of application results are presented: the first one is obtained on a FIB thinned sample using an ion energy of 50 keV and the second set of results confirms the validity of the proposed method on a mechanically polished specimen with no subsequent ion milling.

Sign in / Sign up

Export Citation Format

Share Document