Mössbauer Study of Iron Carbides Formed by Thermal Vacuum Deposition

2020 ◽  
Vol 65 (3) ◽  
pp. 363-366
Author(s):  
A. K. Shokanov ◽  
M. F. Vereshchak ◽  
I. A. Manakova ◽  
A. N. Ozernoy ◽  
Zh. K. Tleubergenov ◽  
...  
2021 ◽  
Vol 66 (1) ◽  
pp. 175-175
Author(s):  
A. K. Shokanov ◽  
M. F. Vereshchak ◽  
I. A. Manakova ◽  
A. N. Ozernoy ◽  
Zh. K. Tleubergenov ◽  
...  

2013 ◽  
Vol 538 ◽  
pp. 125-128 ◽  
Author(s):  
Hirofumi Saito ◽  
Hiroki Komatsuzaki ◽  
Ryuta Ikoma ◽  
Takayuki Komori ◽  
Keigo Kuroda ◽  
...  

Improved fabrication processes of a micro electroosmotic flow pump using hot embossing are described. The microchannels in the micropump were fabricated by hot embossing on a polymethylmethacrylate (PMMA) substrate. A silicon micromachined mold was pressed into the PMMA substrate at a temperature of 145 °C to form microchannel patterns on the substrate. The depth and width of the microchannels were 50 μm and 100 μm, respectively. Aluminum electrodes were deposited using thermal vacuum deposition. A UV ozone treatment was performed to improve adhesion between the PMMA substrate and a PMMA capping layer. This UV ozone treatment enhanced adhesion and resulted in the reduction of the adhesion temperature as low as 70 °C, and nearly no deformation of the microchannels was observed. As a result, the electroosmotic flow pump exhibited the flow rate of 0.5 μl/min when a voltage of 50 V was given between the electrodes separated 8 mm each other.


2016 ◽  
Vol 4 (1) ◽  
pp. 22-30
Author(s):  
Vitalii Borblik ◽  
Andrey Korchevoi ◽  
Andrii Nikolenko ◽  
Viktor Strelchuk ◽  
Alexander Fonkich ◽  
...  

Author(s):  
А. Папикян ◽  
С. Арутюнян ◽  
Н. Агамалян ◽  
Р. Овсепян ◽  
А. Хачатурова ◽  
...  

Abstract Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The currentvoltage characteristics of the Sb2Te3 film exhibit memristive properties with unipolar resistive switching, whereas Sb2Te3/Sb2S3/Sb2Te3 can be considered as a memristor with a parallel connected capacitance.


2018 ◽  
Vol 10 (1) ◽  
pp. 01028-1-01028-3 ◽  
Author(s):  
I. P. Koziarskyi ◽  
◽  
E. V. Maistruk ◽  
D. P. Koziarskyi ◽  
P. D. Maryanchuk ◽  
...  

1991 ◽  
Vol 66 (1-4) ◽  
pp. 309-317 ◽  
Author(s):  
G. Le Caër ◽  
P. Matteazzi

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