Electric Properties of Thin Films Cu2ZnSnSe4 and Cu2ZnSnSe2Te2 (S2) Obtained by Thermal Vacuum Deposition

2018 ◽  
Vol 10 (1) ◽  
pp. 01028-1-01028-3 ◽  
Author(s):  
I. P. Koziarskyi ◽  
◽  
E. V. Maistruk ◽  
D. P. Koziarskyi ◽  
P. D. Maryanchuk ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Properties ◽  
Vacuum Deposition ◽  
Thermal Vacuum ◽  
Thermal Vacuum Deposition

Fabrication of Electroosmotic Flow Pump on Polymethylemethacrylate Substrate Using Hot Embossing

2013 ◽  
Vol 538 ◽  
pp. 125-128 ◽  
Author(s):  
Hirofumi Saito ◽  
Hiroki Komatsuzaki ◽  
Ryuta Ikoma ◽  
Takayuki Komori ◽  
Keigo Kuroda ◽  
...  
Keyword(s):  
Electroosmotic Flow ◽  
Hot Embossing ◽  
Ozone Treatment ◽  
Vacuum Deposition ◽  
Pmma Substrate ◽  
Thermal Vacuum ◽  
Thermal Vacuum Deposition ◽  
Aluminum Electrodes ◽  
Uv Ozone ◽  
Flow Pump

Improved fabrication processes of a micro electroosmotic flow pump using hot embossing are described. The microchannels in the micropump were fabricated by hot embossing on a polymethylmethacrylate (PMMA) substrate. A silicon micromachined mold was pressed into the PMMA substrate at a temperature of 145 °C to form microchannel patterns on the substrate. The depth and width of the microchannels were 50 μm and 100 μm, respectively. Aluminum electrodes were deposited using thermal vacuum deposition. A UV ozone treatment was performed to improve adhesion between the PMMA substrate and a PMMA capping layer. This UV ozone treatment enhanced adhesion and resulted in the reduction of the adhesion temperature as low as 70 °C, and nearly no deformation of the microchannels was observed. As a result, the electroosmotic flow pump exhibited the flow rate of 0.5 μl/min when a voltage of 50 V was given between the electrodes separated 8 mm each other.

scholarly journals Erratum to:Mössbauer Study of Iron Carbides Formed by Thermal Vacuum Deposition

2021 ◽  
Vol 66 (1) ◽  
pp. 175-175
Author(s):  
A. K. Shokanov ◽  
M. F. Vereshchak ◽  
I. A. Manakova ◽  
A. N. Ozernoy ◽  
Zh. K. Tleubergenov ◽  
...  
Keyword(s):  
Vacuum Deposition ◽  
Thermal Vacuum ◽  
Iron Carbides ◽  
Thermal Vacuum Deposition

scholarly journals Fabrication of Nanostructured Objects by Thermal Vacuum Deposition of Ge Films onto (100)GaAs Substrates

2016 ◽  
Vol 4 (1) ◽  
pp. 22-30
Author(s):  
Vitalii Borblik ◽  
Andrey Korchevoi ◽  
Andrii Nikolenko ◽  
Viktor Strelchuk ◽  
Alexander Fonkich ◽  
...  
Keyword(s):  
Vacuum Deposition ◽  
Thermal Vacuum ◽  
Thermal Vacuum Deposition ◽  
Gaas Substrates

scholarly journals Термоэлектрические и мемристивные особенности структур Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- и Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag

2022 ◽  
Vol 56 (3) ◽  
pp. 370
Author(s):  
А. Папикян ◽  
С. Арутюнян ◽  
Н. Агамалян ◽  
Р. Овсепян ◽  
А. Хачатурова ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Single Layer ◽  
Vacuum Deposition ◽  
Thermal Vacuum ◽  
Thermal Vacuum Deposition ◽  
Current Voltage ◽  
Semiconductor Behavior ◽  
Order Of Magnitude ◽  
Current Voltage Characteristics ◽  
Unipolar Resistive Switching

Abstract Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The currentvoltage characteristics of the Sb2Te3 film exhibit memristive properties with unipolar resistive switching, whereas Sb2Te3/Sb2S3/Sb2Te3 can be considered as a memristor with a parallel connected capacitance.

Mössbauer Study of Iron Carbides Formed by Thermal Vacuum Deposition

2020 ◽  
Vol 65 (3) ◽  
pp. 363-366
Author(s):  
A. K. Shokanov ◽  
M. F. Vereshchak ◽  
I. A. Manakova ◽  
A. N. Ozernoy ◽  
Zh. K. Tleubergenov ◽  
...  
Keyword(s):  
Vacuum Deposition ◽  
Thermal Vacuum ◽  
Mössbauer Study ◽  
Iron Carbides ◽  
Thermal Vacuum Deposition

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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