scholarly journals Термоэлектрические и мемристивные особенности структур Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- и Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag

2022 ◽  
Vol 56 (3) ◽  
pp. 370
Author(s):  
А. Папикян ◽  
С. Арутюнян ◽  
Н. Агамалян ◽  
Р. Овсепян ◽  
А. Хачатурова ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Single Layer ◽  
Vacuum Deposition ◽  
Thermal Vacuum ◽  
Thermal Vacuum Deposition ◽  
Current Voltage ◽  
Semiconductor Behavior ◽  
Order Of Magnitude ◽  
Current Voltage Characteristics ◽  
Unipolar Resistive Switching

Abstract Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The currentvoltage characteristics of the Sb2Te3 film exhibit memristive properties with unipolar resistive switching, whereas Sb2Te3/Sb2S3/Sb2Te3 can be considered as a memristor with a parallel connected capacitance.

Current-Voltage Characteristics of Single Layer Polymer Light Emitting Diodes Under High Intensity Electrical Excitation

1999 ◽  
Vol 561 ◽  
Author(s):  
B. Ruhstaller ◽  
J.C. Scott ◽  
P.J. Brock ◽  
S.A. Carter
Keyword(s):  
Electric Fields ◽  
High Intensity ◽  
Single Layer ◽  
Electrical Excitation ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Single Carrier ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Polymer Light Emitting Devices

ABSTRACTWe study the current-voltage characteristics of both double and single carrier polymer light emitting devices in the high intensity electrical excitation regime. Single layer devices are investigated with the orange-emitting MEH-PPV as the active polymer. Performing very low duty (≈0.001 %) pulsed electroluminescence measurements with electric fields up to 1*109 V/m, we observe for the hole-dominated devices a space charge limited current with a saturating mobility and a saturating external quantum efficiency of 1%. For double carrier devices, the current starts to saturate in the high-field regime, appoaching Ohmic-like behavior. We report current densities of 100 A/cm2and brightnesses of 7*105 cd/m2. The spectral features are monitored below the onset of degradation.

Fabrication of Electroosmotic Flow Pump on Polymethylemethacrylate Substrate Using Hot Embossing

2013 ◽  
Vol 538 ◽  
pp. 125-128 ◽  
Author(s):  
Hirofumi Saito ◽  
Hiroki Komatsuzaki ◽  
Ryuta Ikoma ◽  
Takayuki Komori ◽  
Keigo Kuroda ◽  
...  
Keyword(s):  
Electroosmotic Flow ◽  
Hot Embossing ◽  
Ozone Treatment ◽  
Vacuum Deposition ◽  
Pmma Substrate ◽  
Thermal Vacuum ◽  
Thermal Vacuum Deposition ◽  
Aluminum Electrodes ◽  
Uv Ozone ◽  
Flow Pump

Improved fabrication processes of a micro electroosmotic flow pump using hot embossing are described. The microchannels in the micropump were fabricated by hot embossing on a polymethylmethacrylate (PMMA) substrate. A silicon micromachined mold was pressed into the PMMA substrate at a temperature of 145 °C to form microchannel patterns on the substrate. The depth and width of the microchannels were 50 μm and 100 μm, respectively. Aluminum electrodes were deposited using thermal vacuum deposition. A UV ozone treatment was performed to improve adhesion between the PMMA substrate and a PMMA capping layer. This UV ozone treatment enhanced adhesion and resulted in the reduction of the adhesion temperature as low as 70 °C, and nearly no deformation of the microchannels was observed. As a result, the electroosmotic flow pump exhibited the flow rate of 0.5 μl/min when a voltage of 50 V was given between the electrodes separated 8 mm each other.

scholarly journals Erratum to:Mössbauer Study of Iron Carbides Formed by Thermal Vacuum Deposition

2021 ◽  
Vol 66 (1) ◽  
pp. 175-175
Author(s):  
A. K. Shokanov ◽  
M. F. Vereshchak ◽  
I. A. Manakova ◽  
A. N. Ozernoy ◽  
Zh. K. Tleubergenov ◽  
...  
Keyword(s):  
Vacuum Deposition ◽  
Thermal Vacuum ◽  
Iron Carbides ◽  
Thermal Vacuum Deposition

scholarly journals Fabrication of Nanostructured Objects by Thermal Vacuum Deposition of Ge Films onto (100)GaAs Substrates

2016 ◽  
Vol 4 (1) ◽  
pp. 22-30
Author(s):  
Vitalii Borblik ◽  
Andrey Korchevoi ◽  
Andrii Nikolenko ◽  
Viktor Strelchuk ◽  
Alexander Fonkich ◽  
...  
Keyword(s):  
Vacuum Deposition ◽  
Thermal Vacuum ◽  
Thermal Vacuum Deposition ◽  
Gaas Substrates

Electric Properties of Thin Films Cu2ZnSnSe4 and Cu2ZnSnSe2Te2 (S2) Obtained by Thermal Vacuum Deposition

2018 ◽  
Vol 10 (1) ◽  
pp. 01028-1-01028-3 ◽  
Author(s):  
I. P. Koziarskyi ◽  
◽  
E. V. Maistruk ◽  
D. P. Koziarskyi ◽  
P. D. Maryanchuk ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Properties ◽  
Vacuum Deposition ◽  
Thermal Vacuum ◽  
Thermal Vacuum Deposition

Effects of Interface Structure on the Electrical Characteristics of PtSi-Si Schottky Barrier Contacts

1981 ◽  
Vol 10 ◽  
Author(s):  
B.-Y. Tsaur ◽  
D. J. Silversmith ◽  
R. W. Mountain ◽  
C. H. Anderson
Keyword(s):  
Schottky Barrier ◽  
Single Layer ◽  
Electrical Characteristics ◽  
Contact Interface ◽  
Large Area ◽  
Leakage Currents ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
A New Technique ◽  
Multilayer Metallization

The properties of PtSi-Si Schottky barrier contacts formed by a new technique employing multilayer metallization are compared with those of contacts prepared by the conventional single-layer metallization method. The multilayer technique permits the formation of very shallow contacts without any limitation being placed on the thickness of the PtSi layer. For a PtSi layer of given thickness the PtSi-Si contact interface obtained by this technique is more uniform than the interface formed by annealing a single layer of platinum on silicon. The interfacial uniformity is independent of PtSi thickness for shallow PtSi-Si contacts produced by the multilayer technique, while for conventional contacts the uniformity decreases with increasing PtSi thickness. Large-area (9.4 × 10−3 cm2) diodes utilizing shallow PtSi-Si contacts about 200 Å deep have been fabricated without guard rings. These diodes exhibit near-ideal forward current-voltage characteristics, low reverse leakage currents (less than 5 nA at −10 V) and high breakdown voltages (over −90 V). These characteristics are superior to those of diodes using conventional PtSi-Si contacts.

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