Thermal instability of a reconnecting current layer as a trigger for solar flares

2017 ◽  
Vol 125 (2) ◽  
pp. 347-356 ◽  
Author(s):  
L. S. Ledentsov ◽  
B. V. Somov
2016 ◽  
Vol 42 (12) ◽  
pp. 841-849 ◽  
Author(s):  
L. S. Ledentsov ◽  
B. V. Somov

2017 ◽  
Vol 83 (1) ◽  
Author(s):  
Miho Janvier

Solar flares are powerful radiations occurring in the Sun’s atmosphere. They are powered by magnetic reconnection, a phenomenon that can convert magnetic energy into other forms of energy such as heat and kinetic energy, and which is believed to be ubiquitous in the universe. With the ever increasing spatial and temporal resolutions of solar observations, as well as numerical simulations benefiting from increasing computer power, we can now probe into the nature and the characteristics of magnetic reconnection in three dimensions to better understand the phenomenon’s consequences during eruptive flares in our star’s atmosphere. We review in the following the efforts made on different fronts to approach the problem of magnetic reconnection. In particular, we will see how understanding the magnetic topology in three dimensions helps in locating the most probable regions for reconnection to occur, how the current layer evolves in three dimensions and how reconnection leads to the formation of flux ropes, plasmoids and flaring loops.


2011 ◽  
Vol 737 (1) ◽  
pp. 24 ◽  
Author(s):  
Miroslav Bárta ◽  
Jörg Büchner ◽  
Marian Karlický ◽  
Jan Skála
Keyword(s):  

2013 ◽  
Vol 558 ◽  
pp. A16 ◽  
Author(s):  
A. V. Oreshina ◽  
I. V. Oreshina
Keyword(s):  

2011 ◽  
Vol 730 (1) ◽  
pp. 47 ◽  
Author(s):  
Miroslav Bárta ◽  
Jörg Büchner ◽  
Marian Karlický ◽  
Pavel Kotrč
Keyword(s):  

Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.


Author(s):  
V. D. Tereshchenko ◽  
E. B. Vasil'ev ◽  
O. F. Ogloblina ◽  
V. A. Tereshchenko ◽  
S. M. Chernyakov

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