Temperature dependence of the band structure of wurtzite-type semiconductor compounds: Gallium and aluminum nitrides

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

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Temperature Dependence of the Band Structure Parameters in HgSe from Thermomagnetic Measurements

physica status solidi (b) ◽

10.1002/pssb.2220710152 ◽

1975 ◽

Vol 71 (1) ◽

pp. K39-K44 ◽

Cited By ~ 14

Author(s):

T. Dietl ◽

A. Jędrzejczak

Keyword(s):

Band Structure ◽

Temperature Dependence ◽

Structure Parameters

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Anomalous Thermal Expansion of Some Chalcopyrite Type Semiconductor Compounds

Thermal Expansion 8 ◽

10.1007/978-1-4899-5004-8_16 ◽

1984 ◽

pp. 155-168

Author(s):

K. Satyanarayana Murthy ◽

P. Kistaiah ◽

Y. C. Venudhar ◽

Leela Iyengar ◽

K. V. Krishna Rao

Keyword(s):

Thermal Expansion ◽

Semiconductor Compounds ◽

Type Semiconductor ◽

Anomalous Thermal Expansion

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Temperature dependent electronic band structure of wurtzite GaAs nanowires

Nanoscale ◽

10.1039/c7nr07635e ◽

2018 ◽

Vol 10 (3) ◽

pp. 1481-1486 ◽

Cited By ~ 8

Author(s):

Neimantas Vainorius ◽

Simon Kubitza ◽

Sebastian Lehmann ◽

Lars Samuelson ◽

Kimberly A. Dick ◽

...

Keyword(s):

Band Structure ◽

Temperature Dependence ◽

Electronic Band Structure ◽

Temperature Dependent ◽

Electronic Band ◽

Gaas Nanowires

Temperature dependence of the indicated transitions in wurtzite GaAs.

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Appendix C: Temperature Dependence of the Band Structure

Advanced Theory of Semiconductor Devices ◽

10.1109/9780470544105.app3 ◽

2009 ◽

Keyword(s):

Band Structure ◽

Temperature Dependence

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‘‘Universal’’ conduction-band structure in some common semiconductor compounds

Physical Review Letters ◽

10.1103/physrevlett.65.752 ◽

1990 ◽

Vol 65 (6) ◽

pp. 752-755 ◽

Cited By ~ 8

Author(s):

E. A. Johnson ◽

A. MacKinnon ◽

E. P. O’Reilly ◽

M. Silver

Keyword(s):

Band Structure ◽

Conduction Band ◽

Semiconductor Compounds

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The temperature dependence of the resistivity of ferromagnetic metals

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1961.0174 ◽

1961 ◽

Vol 263 (1315) ◽

pp. 473-482 ◽

Cited By ~ 6

Keyword(s):

Band Structure ◽

Temperature Dependence ◽

Fourth Power ◽

Fractional Change ◽

Ferromagnetic Metals ◽

Band Structure Calculations ◽

Structure Calculations ◽

Good Agreement

The temperature dependence of the resistivity of nickel and gadolinium has been measured. For nickel, the results are in good agreement with the band-structure calculations of Fletcher (1952); for gadolinium the fractional change in resistivity is almost exactly equal to the fourth power of the reduced magnetization.

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