Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

2008 ◽  
Vol 42 (6) ◽  
pp. 689-693 ◽  
Author(s):  
A. E. Belyaev ◽  
N. S. Boltovets ◽  
V. N. Ivanov ◽  
V. P. Klad’ko ◽  
R. V. Konakova ◽  
...  
2013 ◽  
Vol 103 (16) ◽  
pp. 162106 ◽  
Author(s):  
Chung-Han Lin ◽  
Evan J. Katz ◽  
Jie Qiu ◽  
Zhichun Zhang ◽  
Umesh K. Mishra ◽  
...  

MRS Advances ◽  
2016 ◽  
Vol 1 (38) ◽  
pp. 2659-2664
Author(s):  
Varsha Rani ◽  
Akanksha Sharma ◽  
Subhasis Ghosh

ABSTRACTCharge transport properties of pentacene have been investigated by a joint experimental and theoretical study. The growth of pentacene on the substrates shows mainly two different polymorphic phases, a bulk phase and a thin-film phase. The thin-film phase is crucial for the charge transport in two-terminal and three-terminal devices such as organic Schottky diodes and organic thin film transistors, respectively. Experimentally, mobility in two-terminal devices is less by five orders of magnitude than that in three-terminal devices. We show here that this difference can be explained on the basis of strong electronic coupling between molecular dimers located in the ab-plane and relatively weak coupling between the planes (along the c-axis).


2021 ◽  
Vol MA2021-01 (33) ◽  
pp. 1072-1072
Author(s):  
Alex Molina ◽  
Steven P. Dail ◽  
Ian E. Campbell ◽  
Timothy N. Walter ◽  
Michael W. Thomas ◽  
...  

1996 ◽  
Vol 80 (8) ◽  
pp. 4467-4478 ◽  
Author(s):  
K. Suzue ◽  
S. N. Mohammad ◽  
Z. F. Fan ◽  
W. Kim ◽  
O. Aktas ◽  
...  

2001 ◽  
Vol 81 (5) ◽  
pp. 453-460 ◽  
Author(s):  
S. Noor Mohammad ◽  
Z.-F. Fan ◽  
A. E. Botchkarev ◽  
W. Kim ◽  
O. Aktas ◽  
...  

2010 ◽  
Vol 7 (1) ◽  
pp. 112-115 ◽  
Author(s):  
Olivier Ménard ◽  
Frédéric Cayrel ◽  
Emmanuel Collard ◽  
Daniel Alquier

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