Vertical gallium nitride schottky diodes for power switching applications.

The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material with intrinsic properties best suited for high power switching applications. This paper simulates and compares the thermal and electrical performance of AlGaN and Silicon (Si) MOSFETs, modeled in COMSOL Multiphysics. Comparisons between similar AlGaN/GaN and Si power modules are made in terms of heatsink requirements. The temperatures for the same operating voltage are found to be significantly lower for the AlGaN MOSFETs structures, compared to Si. The heatsink size for the AlGaN/GaN is found to be smaller compared to Si for the power modules.

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The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)

E3S Web of Conferences ◽

10.1051/e3sconf/202019801025 ◽

2020 ◽

Vol 198 ◽

pp. 01025

Author(s):

Chen Yuanlong

Keyword(s):

Gallium Nitride ◽

Power Efficiency ◽

Electrical Engineering ◽

Current Status ◽

Third Generation ◽

Power Switching ◽

The Third ◽

Electrical Devices ◽

Silicon Based

Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity. And another reason is the MOSFET with Gallium Nitride applied in power switching. However, transistors-related EE major (Electronic and Electrical engineering) courses are still focusing on the old silicon-based transistors, which own many deficiencies. In this paper, the current status of Gallium Nitride based MOSFET is investigated. Besides, a comparison in conducting capability, sensitivity and power efficiency between the MOSFET IRF510 and the Gallium Nitride based product GS-065-008-1-L is carried out. After the comparison, the application of MOSFET in EE courses is suggested and the priorities and difficulties are discussed as well.

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(Invited) Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices

ECS Meeting Abstracts ◽

10.1149/ma2017-02/31/1338 ◽

2017 ◽

Keyword(s):

Gallium Nitride ◽

Aluminum Gallium Nitride ◽

Wide Bandgap ◽

Power Switching ◽

Switching Devices

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SiC Bipolar Power Transistors - Design and Technology Issues for Ultimate Performance

MRS Proceedings ◽

10.1557/proc-1246-b08-01 ◽

2010 ◽

Vol 1246 ◽

Cited By ~ 4

Author(s):

Mikael Ostling ◽

Martin Domeij ◽

Carina Zaring ◽

Andreij Konstantinov ◽

Reza Ghandi ◽

...

Keyword(s):

High Power ◽

Surface Passivation ◽

Schottky Diodes ◽

Design And Technology ◽

Device Performance ◽

Bipolar Junction Transistors ◽

Power Switching ◽

Power Transistors ◽

Fast Switching ◽

Current State

AbstractSilicon carbide (SiC) semiconductor devices for high power are becoming more mature and are now commercially available as discrete devices. Schottky diodes have been on the market since a few years but also bipolar junction transistors (BJTs), JFETs and MOSFETs are now reaching the market. The interest is rapidly growing for these devices in high power and high temperature applications. The BJTs have low conduction losses, fast switching capability, operate in normally-off mode, have high radiation hardness, and can handle high power density.This paper will review the current state of the art in active switching device performance with special emphasis on BJTs. Device performance has been demonstrated over a wide temperature interval. A very important feature in high power switch applications is the low on-resistance of a device. Better material quality and epi processes suppress the amount of basal plane dislocations to avoid stacking fault formation generated during high current injection. This has long been a concern for bipolar SiC devices but several research reports and long term reliability measurements of pn-junctions show that the bipolar degradation problem can be solved by a fine-tuned epitaxial technique. A discussion on surface passivation control is included.Finally, an example of a power switching module is given also demonstrating the excellent paralleling capability of BJTs.

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