Neutron irradiation effects on gallium nitride-based Schottky diodes

2013 ◽  
Vol 103 (16) ◽  
pp. 162106 ◽  
Author(s):  
Chung-Han Lin ◽  
Evan J. Katz ◽  
Jie Qiu ◽  
Zhichun Zhang ◽  
Umesh K. Mishra ◽  
...  
2010 ◽  
Vol 45 (10) ◽  
pp. 1381-1383 ◽  
Author(s):  
I. Akkurt ◽  
H. Akyildirim ◽  
A.F. Özdemir ◽  
D.A. Aldemir

2014 ◽  
Vol 115 (12) ◽  
pp. 123705 ◽  
Author(s):  
Evan J. Katz ◽  
Chung-Han Lin ◽  
Jie Qiu ◽  
Zhichun Zhang ◽  
Umesh K. Mishra ◽  
...  

2019 ◽  
Vol 217 (7) ◽  
pp. 1900701
Author(s):  
Yuan Ren ◽  
Leidang Zhou ◽  
Kang Zhang ◽  
Liang Chen ◽  
Xiaoping Ouyang ◽  
...  

Tungsten ◽  
2021 ◽  
Vol 3 (4) ◽  
pp. 415-433
Author(s):  
Dmitry Terentyev ◽  
Chih-Cheng Chang ◽  
Chao Yin ◽  
A. Zinovev ◽  
Xin-Fu He

2017 ◽  
Vol 31 (28) ◽  
pp. 1750257 ◽  
Author(s):  
Elchin Huseynov ◽  
Aydan Garibli

The effects of temperature and neutron irradiation on the silicon nanoparticles have been studied at different frequencies. It has been defined that additional electro-active radiation defects occur in the silicon nanomaterial after neutron irradiation. Therefore, the change of neutron flux at the interval of [Formula: see text]–[Formula: see text] increases the conductivity of nanosilicon. Activation energies of the silicon nanoparticles were calculated for 10 different constant frequencies according to Arrhenius approach before and after neutron irradiation. The mechanism of electrical conductivity which explains results has been established.


1975 ◽  
Vol 4 (5) ◽  
pp. 883-889 ◽  
Author(s):  
A. R. Sweedler ◽  
D. E. Cox ◽  
L. Newkirk

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