On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

2016 ◽  
Vol 50 (12) ◽  
pp. 1604-1608
Author(s):  
A. N. Yablonsky ◽  
R. Kh. Zhukavin ◽  
N. A. Bekin ◽  
A. V. Novikov ◽  
D. V. Yurasov ◽  
...  
1998 ◽  
Vol 41 (2) ◽  
pp. 109-112 ◽  
Author(s):  
Vladislav B Timofeev ◽  
A V Larionov ◽  
J Zeman ◽  
G Martinez ◽  
J Hvam ◽  
...  

2021 ◽  
Vol 2103 (1) ◽  
pp. 012102
Author(s):  
V Agekyan ◽  
N Filosofov ◽  
G Karczewski ◽  
A Serov ◽  
I Shtrom ◽  
...  

Abstract The photoluminescence (PL) spectra of CdTe/ZnTe double quantum wells (QWs) are studied on a series of samples containing two CdTe layers with nominal thicknesses of 2 and 4 monolayers (ML) in the ZnTe matrix. The QWs were grown in atomic-layer epitaxy and separated by ZnTe spacers with the thicknesses dsp =40−160 ML. The dependences of the relative intensity of shallow QW1 and deep QW2 PL bands (I1 and I2 , respectively) on the pump intensity (J) when excited by the lasers with different radiation wavelengths are investigated. It is found that in the sample with dsp=40 ML, the ratio Y(J)=I1/I2 depends on J and the shape of the Y(J) dependency changes with the excitation wavelength. In the samples with dsp > 70 ML Y(J) also changes with the excitation intensity J, but the shape of this dependence is the same for various excitation wavelengths. It is concluded that the energy relaxation in these samples is influenced not only by the tunneling of charge carriers from QW1 to QW2, but also by carrier relaxation at the nonradiative centers, for which the recombination rate is different for shallow and deep QWs.


JETP Letters ◽  
1998 ◽  
Vol 67 (8) ◽  
pp. 613-620 ◽  
Author(s):  
V. B. Timofeev ◽  
A. V. Larionov ◽  
A. S. Ioselevich ◽  
J. Zeman ◽  
G. Martinez ◽  
...  

2019 ◽  
Vol 6 (1) ◽  
pp. 9-15
Author(s):  
Oleg Zadorozhny ◽  
Olesya Karankevich ◽  
Valery Davydov

It is established that the model of an interzonal radiating recombination in the semiconductor at bipolar injection of charge carriers in which the recombination rate is described by multiply of the complete concentration of charge carriers does not consider the imbalance of concentration of the recombining particles which is physically arising at a doping.


1998 ◽  
Vol 168 (2) ◽  
pp. 117 ◽  
Author(s):  
Vladislav B. Timofeev ◽  
A.V. Larionov ◽  
J. Zeman ◽  
G. Martinez ◽  
J. Hvam ◽  
...  

1996 ◽  
Vol 166 (7) ◽  
pp. 801-803 ◽  
Author(s):  
L.V. Butov ◽  
A. Zrenner ◽  
M. Hagn ◽  
G. Abstreiter ◽  
G. Boehm ◽  
...  
Keyword(s):  

1999 ◽  
Vol 110 (11) ◽  
pp. 633-638
Author(s):  
Joo In Lee ◽  
Annamratu Kasi Viswanath ◽  
Sungkyu Yu ◽  
Eun-Joo Shin ◽  
Kyu-Seok Lee ◽  
...  

1997 ◽  
Vol 60 (3) ◽  
pp. 345-387 ◽  
Author(s):  
R Ferreira ◽  
G Bastard
Keyword(s):  

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