Single electron transistor: energy-level broadening effect and thermionic contribution

In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si-QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy-level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I-V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined. DOI: 10.21883/FTP.2017.12.45191.8239

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Simulation and Modeling of Silicon Based Single Electron Transistor

International Journal of Electrical and Computer Engineering (IJECE) ◽

10.11591/ijece.v8i2.pp900-907 ◽

2018 ◽

Vol 8 (2) ◽

pp. 900

Author(s):

Malik Ashter Mehdy ◽

Mariagrazia Graziano ◽

Gianluca Piccinini

Keyword(s):

Transmission Spectrum ◽

Coulomb Blockade ◽

Single Electron ◽

Single Electron Transistor ◽

Silicon Quantum Dot ◽

Proposed Model ◽

Current Voltage ◽

Transport Direction ◽

Silicon Based ◽

Non Equilibrium

<p>In this work, we simulated and modeled silicon quantum dot based single electron transistor (SET). We simulated the device using non-equilibrium Green’s function (NEGF) formalism in transport direction coupled with Schrodinger equation in transverse directions. The characteristics of SET such as Coulomb blockade and Coulomb diamonds were observed. We also present a new efficient model to calculate the current voltage (IV) characteristics of the SET. The IV characteristic achieved from the model are very similar to those from simulations both in shape and magnitude. The proposed model is capable of reproducing the Coulomb diamond diagram in good agreement with the simulations. The model, which is based on transmission spectrum, is simple, efficient and provides insights on the physics of the device. The transmission spectrum at equilibrium is achieved from simulations and given as input to the model. The model then calculates the evolved transmission spectra at non-equilibrium conditions and evaluates the current using Landauers formula.</p>

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Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance

Journal of Electronic Materials ◽

10.1007/s11664-012-2315-z ◽

2012 ◽

Vol 42 (1) ◽

pp. 47-57 ◽

Cited By ~ 3

Author(s):

M. Miralaie ◽

M. Leilaeioun ◽

K. Abbasian

Keyword(s):

Energy Level ◽

Quantum Dot ◽

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Silicon Quantum Dot

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Single electron transistor: Energy-level broadening effect and thermionic contribution

Semiconductors ◽

10.1134/s1063782617120144 ◽

2017 ◽

Vol 51 (12) ◽

pp. 1656-1660

Author(s):

A. Nasri ◽

A. Boubaker ◽

W. Khaldi ◽

B. Hafsi ◽

A. Kalboussi

Keyword(s):

Energy Level ◽

Single Electron ◽

Single Electron Transistor

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CHARGE STABILITY AND CONDUCTANCE ANALYSIS OF ANTHRACENE-BASED SINGLE ELECTRON TRANSISTOR

International Journal of Nanoscience ◽

10.1142/s0219581x13500452 ◽

2013 ◽

Vol 12 (06) ◽

pp. 1350045 ◽

Cited By ~ 14

Author(s):

ANURAG SRIVASTAVA ◽

BODDEPALLI SANTHIBHUSHAN ◽

PANKAJ DOBWAL

Keyword(s):

Coulomb Blockade ◽

Density Functional ◽

Stability Diagram ◽

Single Electron ◽

Single Electron Transistor ◽

Functional Theory ◽

Charge Stability ◽

Anthracene Molecule ◽

The Stability ◽

Experimental Values

The present paper discusses the investigation of electronic properties of anthracene-based single electron transistor (SET) operating in coulomb blockade region using Density Functional Theory (DFT) based Atomistix toolkit-Virtual nanolab. The charging energies of anthracene molecule in isolated as well as electrostatic SET environments have been calculated for analyzing the stability of the molecule for different charge states. Study also includes the analysis of SET conductance dependence on source/drain and gate potentials in reference to the charge stability diagram. Our computed charging energies for anthracene in isolated environment are in good agreement with the experimental values and the proposed anthracene SET shows good switching properties in comparison to other acene series SETs.

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