Single electron transistor: energy-level broadening effect and thermionic contribution

In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si-QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy-level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I-V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined. DOI: 10.21883/FTP.2017.12.45191.8239

Construction Ventilation of Tongluoshan Expressway Tunnel

Tongluoshan expressway tunnel passes through coal mined out area. It is an extra-long expressway tunnel with high-gas, so construction ventilation is the key in this project. Combined with the theoretical calculation and the actual situation of Tongluoshan Tunnel, the forced ventilation is taken as the major way of construction ventilation. Based on the calculation of required airflow, gas distribution in work area and calculation of air duct resistance and tunnel resistance, the configuration of fans is optimized, thus the construction ventilation of each section have been determined.