Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures

2020 ◽  
Vol 54 (5) ◽  
pp. 581-586
Author(s):  
A. A. Podoskin ◽  
D. N. Romanovich ◽  
I. S. Shashkin ◽  
P. S. Gavrina ◽  
Z. N. Sokolova ◽  
...  
Author(s):  
А.А. Подоскин ◽  
Д.Н. Романович ◽  
И.С. Шашкин ◽  
П.С. Гаврина ◽  
З.Н. Соколова ◽  
...  

The work is devoted to the study of the formation features of high-quality closed modes based on total internal reflection effect in rectangular resonators of large (up to thousands wavelengths) size based on InGaAs/GaAs/AlGaAs laser heterostructures. Features of the spectral composition and spatial configurations of closed mode structures are experimentally investigated. The presence of frequency combs in the spectra was demonstrated and their correspondence to separate spatial configurations of closed modes was shown. The effect of a change in pumping and temperature on the mode composition is also considered.


Author(s):  
А.А. Подоскин ◽  
Д.Н. Романович ◽  
И.С. Шашкин ◽  
П.С. Гаврина ◽  
З.Н. Соколова ◽  
...  

Abstract A lumped model of the dynamics of the controlled switching of high- Q closed-mode structures in rectangular large cavities (up to 1 × 1 mm and larger) based on AlGaAs/InGaAs/GaAs laser heterostructures is presented. The model considers the modulation of the useful power of a closed-mode structure due to controlled generation switching to an alternative closed mode. Generation-switching control between closed mode structures is implemented due to a variation in the optical loss of one structure. A variation in the optical loss occurs due to an increase in interband optical absorption due to the quantum-confined Stark effect upon the application of voltage to a laser crystal segment in the closed-mode propagation region.


Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.


2014 ◽  
Author(s):  
Melissa D. McKenzie ◽  
Sarah Ramsey ◽  
Alan Rosenbaum

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