Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

We review the observations on hopping transport in planar arrays of Si donor atoms in GaAs epitaxial layers grown by molecular beam epitaxy. It is shown that properly designed δ-doping layers permit one to unambigously identify interference effects that result from the coherent superposition of the tunneling amplitudes along alternative paths in the plane. Magnetic flux through the area generated by the paths destroys the interference and leads to negative magnetoresistance. We discuss the observed non-monotonic variation of the resistance.

Download Full-text

Анизотропия отрицательного магнетосопротивления в эапитаксиальных слоях GaMnAs

Физика и техника полупроводников ◽

10.21883/ftp.2021.02.50503.9502 ◽

2021 ◽

Vol 55 (2) ◽

pp. 159

Author(s):

А.С. Газизулина ◽

А.А. Насиров ◽

А.А. Небесный ◽

П.Б. Парчинский ◽

Dojin Kim

Keyword(s):

Uniaxial Anisotropy ◽

Ferromagnetic State ◽

Negative Magnetoresistance ◽

Epitaxial Layers ◽

Axis Orientation ◽

Hard Axis ◽

Spatially Oriented ◽

Gamnas Layer

Anisotropy of magnetotransport properties of GaMnAs epitaxial layers in ferromagnetic state has been investigated as a function of temperature. The anisotropy of negative magnetoresistance that is not related to uniaxial anisotropy and hard axis orientation has been observed. This anisotropy may be result of arising of spatially oriented structures in the GaMnAs layer during its growth.

Download Full-text

Valence band parameters for Hg1−xMgxTe epitaxial layers

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00743-4 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 1209-1213

Author(s):

K Paesler

Keyword(s):

Valence Band ◽

Epitaxial Layers

Download Full-text

Negative Magnetoresistance in (TMTTF)2Br

Journal de Physique I ◽

10.1051/jp1:1996193 ◽

1996 ◽

Vol 6 (12) ◽

pp. 1855-1864 ◽

Cited By ~ 1

Author(s):

M. Basleti? ◽

D. Zanchi ◽

B. Korin-Hamzi? ◽

A. Hamzi? ◽

S. Tomi? ◽

...

Keyword(s):

Negative Magnetoresistance

Download Full-text

IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19884145 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-693-C4-696 ◽

Cited By ~ 1

Author(s):

J. P. LAURENTI ◽

P. ROENTGEN ◽

K. WOLTER ◽

K. SEIBERT ◽

H. KURZ ◽

...

Keyword(s):

Epitaxial Layers

Download Full-text

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

MRS Proceedings ◽

10.1557/proc-719-f8.11 ◽

2002 ◽

Vol 719 ◽

Cited By ~ 1

Author(s):

Masashi Kato ◽

Masaya Ichimura ◽

Eisuke Arai ◽

Shigehiro Nishino

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Activation Energies ◽

Thickness Dependence ◽

Epitaxial Layers ◽

Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Download Full-text

Negative magnetoresistance in insulating CdSe and localized magnetic moments

Annales de Chimie Science des Matériaux ◽

10.3166/acsm.33.351-356 ◽

2008 ◽

Vol 33 (4) ◽

pp. 351-356

Author(s):

Rachid Abdia ◽

Ablehamid El Kaaouachi ◽

Abdelhakim Nafidi ◽

Gérard Biskupski ◽

Jamal Hemine

Keyword(s):

Magnetic Moments ◽

Negative Magnetoresistance

Download Full-text

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19892933 ◽

1989 ◽

Vol 54 (11) ◽

pp. 2933-2950

Author(s):

Emerich Erdös ◽

Petr Voňka ◽

Josef Stejskal ◽

Přemysl Klíma

Keyword(s):

Experimental Data ◽

Gallium Arsenide ◽

Kinetic Study ◽

Gas Phase ◽

Growth Model ◽

Epitaxial Layers ◽

Inhomogeneous Model ◽

Homogeneous Models ◽

Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

Download Full-text