Effect of electrodes on the properties of a thin ferroelectric film

2008 ◽  
Vol 50 (3) ◽  
pp. 472-477 ◽  
Author(s):  
M. D. Glinchuk ◽  
V. Ya. Zaulychny ◽  
V. A. Stephanovich
Keyword(s):  
Ferroelectric Film ◽  
Thin Ferroelectric Film

Nonlinear properties of thin ferroelectric film-based capacitors at elevated microwave power

2006 ◽  
Vol 89 (23) ◽  
pp. 232901 ◽  
Author(s):  
Oleg Soldatenkov ◽  
Tatyana Samoilova ◽  
Andrey Ivanov ◽  
Andrey Kozyrev ◽  
David Ginley ◽  
...  
Keyword(s):  
Microwave Power ◽  
Ferroelectric Film ◽  
Nonlinear Properties ◽  
Thin Ferroelectric Film

The Influence of Mismatch-Induced Field on Thin Ferroelectric Film Size Effects

2004 ◽  
Vol 64 (1) ◽  
pp. 17-38 ◽  
Author(s):  
M. D. GLINCHUK ◽  
A. N. MOROZOVSKA ◽  
E. A. ELISEEV
Keyword(s):  
Size Effects ◽  
Ferroelectric Film ◽  
Thin Ferroelectric Film ◽  
Induced Field

scholarly journals Ferroelectric Instability and Dimensionality in Bi-Layered Perovskites and Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-10 ◽  
Author(s):  
Akira Onodera ◽  
Masanori Fukunaga ◽  
Masaki Takesada
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Lattice Strain ◽  
Ferroelectric Phase ◽  
Ferroelectric Film ◽  
Dimensional Structure ◽  
Layered Perovskite ◽  
Thin Ferroelectric Film ◽  
Layered Perovskites

The dielectric and thermal properties of Bi (bismuth)-layered perovskite SrBi2Ta2O9(SBT) are discussed in comparison with ferroelectric thin BaTiO3films. Although these two perovskites exhibit quite a different nature, the dielectric properties of BaTiO3thin film are similar to those in bulk SBT. The dielectric properties and pseudo-two-dimensional structure between SBT and thin film suggest that the bulk layered ferroelectric SBT is a good model of ultra-thin ferroelectric film with two perovskite layers, free from any misfit lattice strain with substrate and surface charge at the interface with electrodes. Based on the mechanism of ferroelectric phase transition of SBT, it seems plausible that the ferroelectric interaction is still prominent but shows a crossover from ferroelectric to antiferroelectric interaction in perovskite ultra-thin films along the tetragonal axis.

Response Time of Sandwich Varactors Containing Thin Ferroelectric Film

Frequenz ◽  
2005 ◽  
Vol 59 (1-2) ◽  
Author(s):  
Andrey Ivanov ◽  
Oleg Soldatenkov ◽  
Andrey Tumarkin ◽  
Alexander Gagarin ◽  
Andrey Kozyrev
Keyword(s):  
Response Time ◽  
Ferroelectric Film ◽  
Thin Ferroelectric Film

A Picowatt Energy Harvester

2011 ◽  
Vol 1299 ◽  
Author(s):  
Joe Evans ◽  
Johannes Smits ◽  
Carl Montross ◽  
Gerald Salazar
Keyword(s):  
Silicon Substrate ◽  
Energy Harvester ◽  
Bending Moment ◽  
Ferroelectric Film ◽  
The Self ◽  
Interdigitated Electrode ◽  
End Points ◽  
Thin Ferroelectric Film ◽  
Double Beam ◽  
Mems Device

ABSTRACTThe authors describe an energy harvester circuit fabricated with integrated thin ferroelectric film capacitors on a silicon substrate. The harvesting mechanism is a folded double-beam cantilever with proof masses at both end points. Interdigitated electrode capacitors are located at the three points on the folded cantilever that are expected to experience maximum bending moment and should produce up to 5V as a function of external vibration. The die has the dimensions of 1.6mm on a side and is designed to be mounted in a TO-18 package transistor-style package. Due to its small size, the self-contained piezoelectric MEMs device should produce 50 picowatts in a 1g vibration environment while occupying little space.

Sign in / Sign up

Export Citation Format

Share Document