Anodic behavior of cobalt silicides in potassium hydroxide solutions

2013 ◽  
Vol 49 (3) ◽  
pp. 336-343 ◽  
Author(s):  
V. I. Kichigin ◽  
A. B. Shein
1970 ◽  
Vol 117 (2) ◽  
pp. 192 ◽  
Author(s):  
M. N. Hull ◽  
J. E. Ellison ◽  
J. E. Toni

Author(s):  
Ahmed Elkhebu ◽  
◽  
Adnan Zainorabidin ◽  
Ismail Hj. Bakar ◽  
Bujang B. K. Huat ◽  
...  

Author(s):  
Lori L. Sarnecki

Abstract This paper presents two new methods using potassium hydroxide (KOH) as a wet etch technique to successfully stop on gate oxide and find the submicron gate oxide failures that correspond to failure response sites. Applications of this new technique to submicron gate oxide failures on both planar and deep trench MOSFET devices are reported in this paper.


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