9. An Invariance Principle for Nearest-Neighbor Empirical Density Functions

2005 ◽  
Vol 18 (3) ◽  
pp. 649-664
Author(s):  
Younghoon Kim ◽  
Sungchul Lee ◽  
Zhengyan Lin ◽  
Wensheng Wang

2002 ◽  
Vol 747 ◽  
Author(s):  
Burag Yaglioglu ◽  
Hyo-Young Yeom ◽  
Eric Chason ◽  
David C. Paine

ABSTRACTWe have investigated the structure of sputter deposited amorphous and crystalline indium oxide films by electron diffraction. Selected area diffraction patterns were recorded for both states from which radial density functions were derived. The comparison of the crystalline radial density function to the amorphous one shows that the first nearest neighbor distance corresponding to the In-O bond length is 2.2Å and is the same for both states. A model density function for crystalline structure was used to explore the difference in higher order peak positions. We report that the In-In separation in amorphous state has a single characteristic distance of 3.6Å compared to the crystalline state which has two non-equivalent In sites and consequently different separations as In(1)-In(2) at 3.4Å and In(2)-In(2) at 4.3Å.


Metrika ◽  
1975 ◽  
Vol 22 (1) ◽  
pp. 189-203 ◽  
Author(s):  
R D. Reiss

Author(s):  
J. M. Oblak ◽  
W. H. Rand

The energy of an a/2 <110> shear antiphase. boundary in the Ll2 expected to be at a minimum on {100} cube planes because here strue ture is there is no violation of nearest-neighbor order. The latter however does involve the disruption of second nearest neighbors. It has been suggested that cross slip of paired a/2 <110> dislocations from octahedral onto cube planes is an important dislocation trapping mechanism in Ni3Al; furthermore, slip traces consistent with cube slip are observed above 920°K.Due to the high energy of the {111} antiphase boundary (> 200 mJ/m2), paired a/2 <110> dislocations are tightly constricted on the octahedral plane and cannot be individually resolved.


Author(s):  
S. R. Herd ◽  
P. Chaudhari

Electron diffraction and direct transmission have been used extensively to study the local atomic arrangement in amorphous solids and in particular Ge. Nearest neighbor distances had been calculated from E.D. profiles and the results have been interpreted in terms of the microcrystalline or the random network models. Direct transmission electron microscopy appears the most direct and accurate method to resolve this issue since the spacial resolution of the better instruments are of the order of 3Å. In particular the tilted beam interference method is used regularly to show fringes corresponding to 1.5 to 3Å lattice planes in crystals as resolution tests.


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