Raman scattering from impurities in semiconductors. I. General result

A mathematical technique previously used for studying absorption and emission from impurity centres in semiconductors is applied to Raman scattering from such centres. The usual adiabatic approximation is not made. The method makes use of the fact that at most one electron can be bound at the impurity site and reduces the problem in a systematic fashion to the evaluation of traces over only phonon states. These traces are evaluated for a particular type of electron–phonon coupling.

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Raman scattering from impurities in semiconductors. II. Special cases

Canadian Journal of Physics ◽

10.1139/p78-073 ◽

1978 ◽

Vol 56 (5) ◽

pp. 560-564

Author(s):

Robert Barrie ◽

H. -C. Chow

Keyword(s):

Raman Scattering ◽

General Result ◽

Phonon Scattering ◽

Phonon Coupling ◽

Strong Electron ◽

Impurities In Semiconductors ◽

Electron Phonon Coupling ◽

Special Cases ◽

Weak Electron

Special cases of the general result for Raman scattering from an impurity in a semiconductor are discussed. For weak electron–phonon coupling the zero-phonon and one-phonon scattering intensities are derived. For strong electron–phonon coupling a comparison is made between two different approximations that have been previously used.

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The Stokes' Shift in Impurity Spectral Lines. I. Mathematical Technique

Canadian Journal of Physics ◽

10.1139/p72-035 ◽

1972 ◽

Vol 50 (3) ◽

pp. 222-230 ◽

Cited By ~ 4

Author(s):

Robert Barrie ◽

I. W. Sharpe

Keyword(s):

Adiabatic Approximation ◽

Stokes Shift ◽

Spectral Lines ◽

New Method ◽

Mathematical Technique ◽

Impurity Site ◽

Systematic Fashion

A new method of deriving the Stokes' shift in impurity spectral lines is presented. The adiabatic approximation is not used. The method makes use of the fact that at most one electron can be bound at the impurity site and reduces the problem in a systematic fashion to the evaluation of traces over only phonon states. A new method is given of evaluating these traces for a particular electron–phonon system which has the chief features required to discuss the Stokes' shift.

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Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

Scientific Reports ◽

10.1038/s41598-020-79411-x ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

M. Osiekowicz ◽

D. Staszczuk ◽

K. Olkowska-Pucko ◽

Ł. Kipczak ◽

M. Grzeszczyk ◽

...

Keyword(s):

Raman Scattering ◽

Temperature Effect ◽

Band Gap ◽

Raman Spectra ◽

Quantum Interference ◽

Optical Band Gap ◽

Phonon Coupling ◽

Phonon Modes ◽

Electron Phonon Coupling ◽

Resonant Raman

AbstractThe temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.

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