The effect of impurity position and doping concentration on the binding energies and total optical absorption coefficients in a $${\delta }$$-doped quantum well

2021 ◽  
Vol 136 (4) ◽  
Author(s):  
Aysevil Salman Durmuşlar ◽  
Aslan Turkoglu ◽  
Miguel Eduardo Mora-Ramos ◽  
Fatih Ungan
Keyword(s):  
Optical Absorption ◽  
Quantum Well ◽  
Doping Concentration ◽  
Binding Energies ◽  
Absorption Coefficients ◽  
Impurity Position

scholarly journals Excitonic States and Related Optical Susceptibility in InN/AlN Quantum Well Under the Effects of the Well Size and Impurity Position

2021 ◽  
Vol 4 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Fathallah Jabouti ◽  
Haddou El Ghazi ◽  
Redouane En-nadir ◽  
Izeddine Zorkani ◽  
Anouar Jorio
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Binding Energies ◽  
Exciton Transition ◽  
Impurity Position ◽  
Optical Susceptibility ◽  
Peak Energy ◽  
Eigen Values ◽  
Excitonic States ◽  
Photoluminescence Peak

Based on the finite difference method, linear optical susceptibility, photoluminescence peak and binding energies of three first states of an exciton trapped by a positive charge donor-impurity ( ) confined in InN/AlN quantum well are investigated in terms of well size and impurity position. The electron, heavy hole free and bound excitons allowed eigen-values and corresponding eigen-functions are obtained numerically by solving one-dimensional time-independent Schrödinger equation. Within the parabolic band and effective mass approximations, the calculations are made considering the coupling of the electron in the n-th conduction subband and the heavy hole in the m-th valence subband under the impacts of the well size and impurity position. The obtained results show clearly that the energy, binding energy and photoluminescence peak energy show a decreasing behavior according to well size for both free and bound cases. Moreover, the optical susceptibility associated to exciton transition is strongly red-shift (blue-shifted) with enhancing the well size (impurity position).

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

The electronic states and the optical absorption for an asymmetrical quantum well applied with an external electric field

2019 ◽  
Vol 33 (26) ◽  
pp. 1950301 ◽  
Author(s):  
Yu Liu ◽  
Youbin Yu
Keyword(s):  
Optical Absorption ◽  
Iterative Method ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
External Electric Field ◽  
Electronic States ◽  
Matrix Approach ◽  
Absorption Coefficients ◽  
Asymmetric Quantum

Electric field influences on the electronic states and the optical absorption in an asymmetrical quantum well with semiparabolic potential are investigated. The formula for the absorption coefficients in this asymmetrical quantum well with electric field are deduced by applying iterative method and density-matrix approach. The results are discussed with GaAs/AlGaAs materials and show that the external electric field has a significant effect on the electronic states and absorption coefficients of asymmetric quantum wells.

Optical absorption coefficients in asymmetric quantum well

2019 ◽  
Vol 383 (34) ◽  
pp. 125983 ◽  
Author(s):  
Chaojin Zhang ◽  
Cong Min ◽  
Bo Zhao
Keyword(s):  
Optical Absorption ◽  
Quantum Well ◽  
Absorption Coefficients ◽  
Asymmetric Quantum
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