InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.1408264 ◽

2002 ◽

Vol 91 (1) ◽

pp. 528 ◽

Author(s):

T. Egawa ◽

B. Zhang ◽

N. Nishikawa ◽

H. Ishikawa ◽

T. Jimbo ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Green Light ◽

Chemical Vapor ◽

Multiple Quantum ◽

Light Emitting ◽

Metalorganic Chemical

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Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Applied Physics Letters ◽

10.1063/1.4841755 ◽

2013 ◽

Vol 103 (23) ◽

pp. 231108 ◽

Author(s):

A. M. Hosalli ◽

D. M. Van Den Broeck ◽

D. Bharrat ◽

N. A. El-Masry ◽

S. M. Bedair

Keyword(s):

Gallium Nitride ◽

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Light Emitting ◽

Metalorganic Chemical

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Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition

10.1117/12.741718 ◽

2007 ◽

Author(s):

Z. S. Lee ◽

Z. C. Feng ◽

A. G. Li ◽

H. L. Tsai ◽

J. R. Yang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Structural Investigation ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Light Emitting ◽

Metalorganic Chemical

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InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition

physica status solidi (c) ◽

10.1002/pssc.200303485 ◽

2003 ◽

Vol 0 (7) ◽

pp. 2244-2247 ◽

Author(s):

Baijun Zhang ◽

Takashi Egawa ◽

Yang Liu ◽

Hiroyasu Ishikawa ◽

Takashi Jimbo

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Light Emitting Diodes ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Light Emitting ◽

Metalorganic Chemical

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Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition

10.1117/12.677653 ◽

2006 ◽

Author(s):

Z. C. Feng ◽

J. Chen ◽

H. Tsai ◽

J. Yang ◽

P. Li ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Structural Investigation ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Light Emitting ◽

Metalorganic Chemical

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STRUCTURAL AND OPTICAL PROPERTIES OF InGaN/GaN MULTIPLE QUANTUM WELL LIGHT EMITTING DIODES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

III-Nitride Devices and Nanoengineering ◽

10.1142/9781848162242_0003 ◽

2008 ◽

pp. 57-88

Author(s):

Zhe Chuan Feng ◽

Jer-Ren Yang ◽

Alan Gang Li ◽

Ian T. Ferguson

Keyword(s):

Optical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Light Emitting Diodes ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Light Emitting ◽

Metalorganic Chemical

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Analysis of the in-plane bandgap distribution in selectively grown InGaAs/InGaAsP multiple quantum well by low pressure metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91060-x ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 256-262 ◽

Author(s):

T. Itagaki ◽

T. Kimura ◽

K. Goto ◽

Y. Mihashi ◽

S. Takamiya ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Low Pressure ◽

Multiple Quantum ◽

Metalorganic Chemical

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GaInNAs/GaAs Multiple-Quantum-Well Grown by Metalorganic Chemical Vapor Deposition Using Nitrogen Carrier Gas

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.1511 ◽

2003 ◽

Vol 42 (Part 1, No. 4A) ◽

pp. 1511-1513 ◽

Author(s):

Tetsuo Nishida ◽

Mitsuru Takaya ◽

Takeo Kaneko ◽

Tatsuya Shimoda

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Carrier Gas ◽

Metalorganic Chemical

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High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.22.l727 ◽

1983 ◽

Vol 22 (Part 2, No. 11) ◽

pp. L727-L729 ◽

Author(s):

Hiroji Kawai ◽

Osamu Matsuda ◽

Kunio Kaneko

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

High Al Content ◽

Metalorganic Chemical

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Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.91206 ◽

1979 ◽

Vol 35 (7) ◽

pp. 487-489 ◽

Author(s):

R. D. Dupuis ◽

P. D. Dapkus ◽

N. Holonyak ◽

R. M. Kolbas

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Injection Lasers ◽

Metalorganic Chemical

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Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition

Current Applied Physics ◽

10.1016/j.cap.2006.10.008 ◽

2007 ◽

Vol 7 (5) ◽

pp. 469-473 ◽

Author(s):

T.K. Kim ◽

S.K. Shim ◽

S.S. Yang ◽

J.K. Son ◽

Y.K. Hong ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Growth Parameters ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Metalorganic Chemical

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