Intense Light Induced Refractive-Index Changes

In this work, the optical absorption coefficients and the refractive index changes for the infinite and finite semi-parabolic quantum well are calculated. Numerical calculations are performed for typical GaAs / Al x Ga 1-x As semi-parabolic quantum well. The energy eigenvalues and eigenfunctions of these systems are calculated numerically. Optical properties are obtained using the compact density matrix approach. Results show that the energy eigenvalues and the matrix elements of the infinite and finite cases are different. The calculations reveal that the resonant peaks of the optical properties of the finite case occur at lower values of the incident photon energy with respect to the infinite case. Results indicate that the maximum value of the refractive index changes for the finite case are greater than that of the infinite case. Our calculations also show that in contrast to the infinite case, the resonant peak value of the total absorption coefficient in the case of the finite well is a non-monotonic function of the semi-parabolic confinement frequency.

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Calculation of Electrooptically Induced Refractive Index Changes of Integrated Optic Devices by the Finite-Element-Method

Journal of Optical Communications ◽

10.1515/joc.1991.12.4.125 ◽

1991 ◽

Vol 12 (4) ◽

Cited By ~ 4

Author(s):

S. Steinberg ◽

M. Guntau ◽

R. Göring ◽

W. Karthe

Keyword(s):

Finite Element Method ◽

Finite Element ◽

Refractive Index ◽

The Finite Element Method ◽

Integrated Optic Devices ◽

Index Changes ◽

Element Method

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Determination of Refractive Index Changes in Photosensitive Polymer Films by an Optical Waveguide Technique

Applied Optics ◽

10.1364/ao.14.000560 ◽

1975 ◽

Vol 14 (3) ◽

pp. 560 ◽

Cited By ~ 4

Author(s):

H. A. Weakliem ◽

D. J. Channin ◽

A. Bloom

Keyword(s):

Refractive Index ◽

Optical Waveguide ◽

Polymer Films ◽

Photosensitive Polymer ◽

Index Changes

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Optimal refractive index changes for cross-gain and cross-phase modulation

10.1117/12.316662 ◽

1998 ◽

Cited By ~ 3

Author(s):

Thomas Keating ◽

Jeffrey R. Minch ◽

Seoung-Hwan Park ◽

Shun-Lien Chuang ◽

Tawee Tanbun-Ek

Keyword(s):

Refractive Index ◽

Phase Modulation ◽

Cross Phase Modulation ◽

Index Changes

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Refractive index changes of ion-implanted quartz

phys stat sol (a) ◽

10.1002/pssa.2210760260 ◽

1983 ◽

Vol 76 (2) ◽

pp. K171-K174 ◽

Cited By ~ 6

Author(s):

H. Beez ◽

D. Fasold ◽

H. Karge

Keyword(s):

Refractive Index ◽

Index Changes ◽

Ion Implanted

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Polysilane-Based Thin Films with High Photosensitivity

MRS Proceedings ◽

10.1557/proc-726-q12.5 ◽

2002 ◽

Vol 726 ◽

Cited By ~ 4

Author(s):

K. Simmons-Potter ◽

G. M. Jamison ◽

B. G. Potter ◽

W. J. Thomes ◽

C. C. Phifer

Keyword(s):

Refractive Index ◽

Laser Exposure ◽

Alkyl Aryl ◽

Index Changes ◽

Krf Excimer Laser ◽

Intrinsic Photosensitivity ◽

Optical Behavior ◽

High Photosensitivity ◽

Film Form ◽

Limited Testing

AbstractThe present work investigates the intrinsic photosensitivity of a family of poly(alkyl)(aryl)silanes and poly(hydridophenyl)silane for use in the development of photoimprinted waveguide devices. Limited testing of passive optical behavior (e.g. absorption, refractive index) and photosensitive response was performed for these materials in thin film form. It was determined that the materials exhibited dramatic photobleaching under 248 nm (KrF excimer laser) exposure. Based on a Kramers-Kronig analysis of the absorption changes, refractive index changes on the order of - 0.1 are estimated. Confirmation of this calculation has been provided via ellipsometry which estimates refractive index changes at 632 nm of -0.14 ± 0.01. In addition, embedded strips have been photoimprinted into the material to confirm waveguiding capacity of the films. Possible sources of photosensitivity in this material and its potential for application in various device configurations will be discussed.

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