HETERODIMENSIONAL CONTACTS AND OPTICAL DETECTORS

2000 ◽  
Vol 10 (01) ◽  
pp. 375-386 ◽  
Author(s):  
BAHRAM NABET ◽  
FRANCISCO CASTRO ◽  
AMRO ANWAR ◽  
ADRIANO COLA
Keyword(s):  
Energy Levels ◽  
Electron Gas ◽  
Three Dimensional ◽  
Current Transport ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Modulation Doping ◽  
Optical Detectors ◽  
Different Dimensions ◽  
Dimensional Electron Gas

The structures of systems of different dimensions and their interface can be called heterodimensional devices. In this paper we discuss a family of photodetector devices that are based on embedding three dimensional (3D) to two dimensional (2D) contacts by employing modulation doping of a layered heterostructure and contacting the resultant two dimensional electron gas by Schottky metal. The process of current transport between 3D and 2D is analyzed showing barrier enhancement mechanisms due to electron confinement. Optical spectral behavior is also discussed showing the effect of quantized energy levels as well as the electric field present in these multilayer structures.

Sensitivity To Disorder Of Graphene-Like Lattices Of Quantum Dots And Antidots In Two-Dimensional Electron Gas

2016 ◽  
Vol 11 (1) ◽  
pp. 80-87
Author(s):  
Olga Tkachenko ◽  
Vitaliy Tkachenko
Keyword(s):  
Quantum Dots ◽  
Electron Gas ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Semiconductor Structures ◽  
Dimensional Electron Gas ◽  
Artificial Graphene ◽  
Electronic Channels

We compare three-dimensional electrostatics of semiconductor structures with graphene-like lattices of quantum dots and antidots formed in the plane of the two dimensional electron gas. With lattice constant fixed, the shape of the potential may be tuned so that both lattices have minband spectrum where the second Dirac feature is pronounced and not overlaid by the other states. We show that the lattice of quantum dots is more sensitive to fabrication imperfections, because sources of the disorder are located directly above the electronic channels. Thus the lattices of antidots should be preferred semiconductor artificial graphene candidates.

scholarly journals Two-dimensional electron gas at wurtzite–zinc-blende InP interfaces induced by modulation doping

2020 ◽  
Vol 116 (23) ◽  
pp. 232103
Author(s):  
Irene Geijselaers ◽  
Sebastian Lehmann ◽  
Kimberly A. Dick ◽  
Mats-Erik Pistol
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Modulation Doping ◽  
Zinc Blende ◽  
Dimensional Electron Gas

Anisotropic Electron Mobility of Two-Dimensional-Electron-Gas in Modulation Doped Inx.Ga1−y As/InyAl1−yAs Heterostructures

1992 ◽  
Vol 263 ◽  
Author(s):  
Jianhui Chen ◽  
J.M. Fernandez ◽  
H.H. Wieder
Keyword(s):  
Electron Mobility ◽  
Electron Gas ◽  
Buffer Layers ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Modulation Doping ◽  
Temperature Electron ◽  
Dimensional Electron Gas ◽  
Lattice Matched

ABSTRACTWe have investigated the electrical properties of the two-dimensional-electron-gas (2DEG) present in strain relaxed heterojunctions with InxGa1−xAs channels (x<0.4). These were grown by molecular beam epitaxy on misoriented (001) GaAs substrates using compositionally step graded buffer layers, … x' = 0.1 per step, each step 0.3 µm thick. The 2DEG is produced by modulation doping using lattice matched InyAl1−yAs as the carrier supply layer. We find typical electron densities and mobilities, for x=0.3, of ns(300 K) = 1.3 × 1012 cm−2 and µH(300 K) = 9300 cm2/V-s; and for ns(1.6 K) = 1.2 × 1012 cm−2, µH(1.6 K) = 37800 cm2/V-s. While the room temperature electron mobility shows negligible anisotropy, an <110>-orientation dependent low temperature electron mobility of the 2DEG is observed and attributed to dislocation scattering.

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