Coulomb coupling between two-dimensional and three-dimensional electron-gas layers: Influence on electrical transport

1992 ◽  
Vol 45 (23) ◽  
pp. 13538-13543 ◽  
Author(s):  
I. I. Boiko ◽  
P. Vasilopoulos ◽  
Yu. M. Sirenko
Keyword(s):  
Electrical Transport ◽  
Electron Gas ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Coulomb Coupling ◽  
Dimensional Electron Gas

Sensitivity To Disorder Of Graphene-Like Lattices Of Quantum Dots And Antidots In Two-Dimensional Electron Gas

2016 ◽  
Vol 11 (1) ◽  
pp. 80-87
Author(s):  
Olga Tkachenko ◽  
Vitaliy Tkachenko
Keyword(s):  
Quantum Dots ◽  
Electron Gas ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Semiconductor Structures ◽  
Dimensional Electron Gas ◽  
Artificial Graphene ◽  
Electronic Channels

We compare three-dimensional electrostatics of semiconductor structures with graphene-like lattices of quantum dots and antidots formed in the plane of the two dimensional electron gas. With lattice constant fixed, the shape of the potential may be tuned so that both lattices have minband spectrum where the second Dirac feature is pronounced and not overlaid by the other states. We show that the lattice of quantum dots is more sensitive to fabrication imperfections, because sources of the disorder are located directly above the electronic channels. Thus the lattices of antidots should be preferred semiconductor artificial graphene candidates.

HETERODIMENSIONAL CONTACTS AND OPTICAL DETECTORS

2000 ◽  
Vol 10 (01) ◽  
pp. 375-386 ◽  
Author(s):  
BAHRAM NABET ◽  
FRANCISCO CASTRO ◽  
AMRO ANWAR ◽  
ADRIANO COLA
Keyword(s):  
Energy Levels ◽  
Electron Gas ◽  
Three Dimensional ◽  
Current Transport ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Modulation Doping ◽  
Optical Detectors ◽  
Different Dimensions ◽  
Dimensional Electron Gas

The structures of systems of different dimensions and their interface can be called heterodimensional devices. In this paper we discuss a family of photodetector devices that are based on embedding three dimensional (3D) to two dimensional (2D) contacts by employing modulation doping of a layered heterostructure and contacting the resultant two dimensional electron gas by Schottky metal. The process of current transport between 3D and 2D is analyzed showing barrier enhancement mechanisms due to electron confinement. Optical spectral behavior is also discussed showing the effect of quantized energy levels as well as the electric field present in these multilayer structures.

scholarly journals Electrical transport of an AlGaN/GaN two-dimensional electron gas

2000 ◽  
Vol 5 (S1) ◽  
pp. 619-625 ◽  
Author(s):  
A. Saxler ◽  
P. Debray ◽  
R. Perrin ◽  
S. Elhamri ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Carrier Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron Effective Mass ◽  
Mobility Spectrum ◽  
Single Carrier ◽  
Dimensional Electron Gas

An AlxGa1−xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm−2 and a mobility of 1.9 × 104 cm2/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 × 10−12 s.

Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Saxler ◽  
P. Debray ◽  
R. Perrin ◽  
S. Elhamri ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Carrier Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron Effective Mass ◽  
Mobility Spectrum ◽  
Single Carrier ◽  
Dimensional Electron Gas

AbstractAn AlxGa1-xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm-2 and a mobility of 1.9 × 104 cm2/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 × 10-12 s.

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