DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS AND THEIR APPLICATION IN PHOTONIC INTEGRATED DEVICES

Distributed feedback (DFB) semiconductor lasers, especially those with gain-coupled (GC) mechanisms, are studied. A GaAlAs/GaAs multi-quantum well GC-DFB laser with a loss grating is fabricated using MBE for the first time. A 1.3 µm InGaAsP/InP DFB laser with a loss grating and one with a gain grating formed by injected carriers are developed by LPE and MOVPE, respectively. GC-DFB lasers monolithically integrated with electroabsorption modulator is studied systematically for the first time. A novel integrated device structure is proposed and fabricated successfully.

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1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.939 ◽

2014 ◽

Vol 778-780 ◽

pp. 939-942 ◽

Cited By ~ 1

Author(s):

Sei Hyung Ryu ◽

Charlotte Jonas ◽

Craig Capell ◽

Yemane Lemma ◽

Anant Agarwal ◽

...

Keyword(s):

Ion Implantation ◽

The Body ◽

Control Circuit ◽

Body Effect ◽

Power Mosfet ◽

Monolithically Integrated ◽

Integrated Devices ◽

Integrated Device ◽

First Time ◽

Drift Layer

For the first time, a 1200 V 4H-SiC power MOSFET with a monolithically integrated gate buffer circuit has been demonstrated successfully. The device used a 6x1015cm-3doped, 10 μm thick n-type drift layer to support 1200 V. The gate buffer circuit was built in a p-well, formed by boron ion implantation. The integrated device provided sufficient voltage isolation for the control circuit from the drain of the power MOSFET, and supported internal supply voltages up to 20 V. The operation of the integrated devices was demonstrated. A specific on-resistance (Ron,sp) of 20 mΩ-cm2was observed. The highRon,spwas due to the limitations in NMOS pull-up circuit topology and the body effect in the 4H-SiC NMOSFET. Development of PMOS pull-up devices is recommended for future integration efforts.

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A 10-Gb/s optical transmitter module with a monolithically integrated electroabsorption modulator with a DFB laser

IEEE Photonics Technology Letters ◽

10.1109/68.62022 ◽

1990 ◽

Vol 2 (12) ◽

pp. 896-898 ◽

Cited By ~ 12

Author(s):

M. Goto ◽

K. Hironishi ◽

A. Sugata ◽

K. Mori ◽

T. Horimatsu ◽

...

Keyword(s):

Electroabsorption Modulator ◽

Monolithically Integrated ◽

Optical Transmitter ◽

Dfb Laser

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Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

MRS Proceedings ◽

10.1557/proc-537-g2.2 ◽

1998 ◽

Vol 537 ◽

Author(s):

Daniel Hofstetter ◽

Robert L. Thornton ◽

Linda T. Romano ◽

David P. Bour ◽

Michael Kneissl ◽

...

Keyword(s):

Ion Beam ◽

Device Fabrication ◽

Distributed Feedback ◽

Coupling Scheme ◽

Optically Pumped ◽

Ion Beam Etching ◽

Measurement Results ◽

Dfb Laser ◽

First Time

AbstractWe present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1. 1 A were observed in 500 μm long and 10 μm wide devices. The 3rd order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.

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