20-40-Gbit/s-CLASS GaAs MESFET DIGITAL ICs FOR FUTURE OPTICAL FIBER COMMUNICATIONS SYSTEMS

1998 ◽  
Vol 09 (02) ◽  
pp. 399-435 ◽  
Author(s):  
TAIICHI OTSUJI ◽  
KOICHI MURATA ◽  
KOICHI NARAHARA ◽  
KIMIKAZU SANO ◽  
EIICHI SANO ◽  
...  

This paper describes recent advances in high-speed digital IC design technologies based on GaAs MESFETs for future high-speed optical communications systems. We devised new types of a data selector and flip-flops, which are key elements in performing high-speed digital functions (signal multiplexing, decision, demultiplexing, and frequency conversion) in front-end transmitter/receiver systems. Incorporating these circuit design technologies with state-of-the-art 0.12 μm gate-length GaAs MESFET process, we developed a DC-to-44-Gbit/s 2:1 data multiplexer IC, a DC-to 22-Gbit/s static decision IC, and a 20-to-40-Gbit/s dynamic decision IC. The fabricated ICs demonstrated record speed performances for GaAs MESFETs. Although further operating speed margin is still required, the GaAs MESFET is a potential candidate for 20- to 40-Gbit/s class applications.

2003 ◽  
Vol 13 (01) ◽  
pp. 1-25 ◽  
Author(s):  
TAIICHI OTSUJI

This paper describes state-of-the-art of high-speed electronic device and IC technologies for very high-speed lightwave communications systems. The technology of interest is for over 40-Gbit/s transmitter and receiver operations. Device technology including Si-Ge, GaAs-based, and InP-based heterostructure transistors as well as circuit design technology including analog/digital/mixed-signal and optoelectronic IC's are reviewed. The speed limiting factors are discussed to address the future trends toward 100 Gbit/s and beyond.


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