DYNAMICS AND LOCAL STRUCTURE OF COLOSSAL MAGNETORESISTANCE MANGANITES

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2725-2730 ◽  
Author(s):  
C. CASTELLANO ◽  
F. CORDERO ◽  
R. CANTELLI ◽  
C. MENEGHINI ◽  
S. MOBILIO ◽  
...  

We report Extended X-ray Absorption Fine Structure and anelastic spectroscopy measurements on hole doped manganese oxides La 1-x Ca x MnO 3 which present the colossal magnetoresistance effect. EXAFS measurements were realized both in the absence and presence of an applied magnetic field of 1.1 Tesla, in a wide temperature range (between 330 and 77 K) and at various dopings (x = 0.25 and x = 0.33). The magnetic field orders the magnetic moments so favouring the electron mobility and the reduction of Mn-O octahedra distortions. We observe the presence of four short and two long Mn-O distances (1.93 and 2.05Å respectively) above and also below the metal-insulator phase transition. The overall distortion decreases but does not completely disappear in the metallic phase suggesting the possible coexistence of metallic and insulating regions at low temperatures. The magnetic field reduces the lattice distortions showing evidence of a microscopic counterpart of the macroscopic colossal magnetoresistance. We also present preliminary anelastic relaxation spectra in a wide temperature range from 900 K to 1 K on a sample with x = 0.40, in order to study the structural phase transitions and the lattice dynamics. A double peak has been observed at the metal-insulator transition in the imaginary part of Young's modulus. This double peak indicates that the metal-insulator transition could be a more complex phenomenon than a simple second order phase transition. In particular the peak at lower temperatures can be connected with the possible presence of inhomogeneous phase structures. Another intense dissipation peak has been observed corresponding to the structural orthorhombic-trigonal transition around 750 K.

1975 ◽  
Vol 53 (17) ◽  
pp. 1593-1605 ◽  
Author(s):  
T. Tiedje ◽  
J. F. Carolan ◽  
A. J. Berlinsky ◽  
L. Weiler

The magnetoresistance of TTF-TCNQ has been measured for currents along the crystallographic b axis in static fields of 50 kOe for temperatures between 17 and 98 K. For [Formula: see text] the magnetoresistance Δρ/ρ = [ρ(50 kOe) − ρ(0)]/ρ(0) is less than 0.1% in magnitude. There is a peak of about −1.4% at 52.8 ± 0.2 K. Below 50 K, Δρ/ρ is small and negative and is described reasonably well by the formula Δρ/ρ = −(1/2)(μBH/kT)2. At all temperatures Δρ/ρ was found to be approximately independent of the orientation of the applied field with respect to the current. The high temperature behavior is consistent with that expected for a metal in the short scattering time limit [Formula: see text]. We attribute the peak at 52.8 K to the suppression of the metal–insulator transition by the magnetic field, and we show why such behavior would be expected for a Peierls transition. In the low temperature region the crystal acts like a small gap semiconductor for which the –T−2 dependence of Δρ/ρ is easily understood. We note that the peak in the magnetoresistance at 52.8 K strongly suggests that the electronic energy gap goes to zero at this temperature. One is then led to conclude that the decrease in the conductivity between 58 and 53 K is due to resistive fluctuations above the metal–insulator transition.


1998 ◽  
Vol 106 (3) ◽  
pp. 157-161
Author(s):  
G. Brunthaler ◽  
T. Dietl ◽  
A. Prinz ◽  
M. Sawicki ◽  
J. Jaroszyński ◽  
...  

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