POLAR-OPTICAL PHONON-LIMITED ELECTRON MOBILITY IN QUANTUM WIRES

2006 ◽  
Vol 20 (21) ◽  
pp. 3015-3025 ◽  
Author(s):  
ARSHAK L. VARTANIAN
Keyword(s):  
Optical Phonon ◽  
Electron Mobility ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Dielectric Medium ◽  
Polar Optical Phonon ◽  
Wire Radius ◽  
Phonon Confinement ◽  
Intersubband Transitions ◽  
Low Field

The electron mobility conditioned by confined and interface polar-optical phonons for a quasi-one-dimensional cylindrical quantum wire embedded in a dielectric medium is investigated analytically. It is shown that the inclusion of the polar optical phonon confinement effects is crucial for accurate calculation of the low-field electron mobility in quantum wire. Taking into account the inelasticity of the electron-polar optical phonon interaction, the electron mobility is derived by a method which was successfully applied in three- and quasi-two-dimensional cases. The contribution of intersubband transitions to electron mobility for the Cd 0.35 Zn 0.65 Se quantum wire embedded in the CdZn dielectric medium is estimated. The extremums on the mobility dependences on wire radius and Cd concentration are obtained.

COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING

2008 ◽  
Vol 22 (13) ◽  
pp. 1357-1366 ◽  
Author(s):  
M. REZAEE ROKN-ABADI ◽  
H. ARABSHAHI ◽  
M. R. BENAM
Keyword(s):  
Electron Mobility ◽  
Born Approximation ◽  
Acoustic Phonon ◽  
Experimental Methods ◽  
Phase Shift Analysis ◽  
Device Modeling ◽  
Polar Optical Phonon ◽  
Relaxation Time Approximation ◽  
Low Field ◽  
Shift Analysis

Temperature and doping dependencies of electron mobility in SiC and GaN structures have been calculated using an iteravive technique. The following scattering mechanisims, i.e. impurity, polar optical phonon, acoustic phonon, piezoelectric and electron–plasmon are included in the calculation. Ionized imurity scattering has been treated beyond the Born approximation using the phase-shift analysis. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.

PHONON CONFINEMENT EFFECT ON THE BINDING ENERGY OF A HYDROGENIC IMPURITY IN QUANTUM WIRES IN THE ELECTRIC AND MAGNETIC FIELDS

2012 ◽  
Vol 15 ◽  
pp. 184-190
Author(s):  
ABBAS SHAHBANDARI
Keyword(s):  
Binding Energy ◽  
Magnetic Fields ◽  
Quantum Wires ◽  
Polar Optical Phonon ◽  
Phonon Confinement ◽  
Hydrogenic Impurity ◽  
Bound Polaron ◽  
Electric And Magnetic Fields ◽  
Applied Fields ◽  
Variation Technique

The effect of phonon confinement on ground state binding energy of bound polaron in polar quantum wires with a finite confining potential investigated by Landau-Pekar variation technique. The effect of external electric and magnetic fields is taken into account as well. The obtained results show that the polar optical phonon confinement leads to a considerable enhancement of the polaron effect and these corrections increase with increasing of applied fields.

scholarly journals Influence of Confined Phonons on the Hall Coefficient in a Cylindrycal Quantum wire with an infinite potential (for electron – confined optical phonon scattering)

2019 ◽  
Vol 35 (3) ◽  
Author(s):  
Pham Ngoc Thang ◽  
Le Thai Hung ◽  
Do Tuan Long ◽  
Nguyen Quang Bau
Keyword(s):  
Magnetic Field ◽  
Hall Coefficient ◽  
Optical Phonon ◽  
Quantum Wire ◽  
Phonon Scattering ◽  
Constant Electric Field ◽  
Optical Phonons ◽  
Phonon Confinement ◽  
Optical Phonon Scattering ◽  
Analytical Expressions

The influence of confined optical phonons on the Hall Coefficient (HC) in a Cylindrycal Quantum Wire (CQW) with an infinite potential (for electron – confined optical phonons scattering). Consider a case where CQW is placed in a perpendicular magnetic field , a constant - electric field  and an intense electromagnetic wave . By using the quantum kinetic equation for electrons interacting with Confined Optical Phonon (COP), we obtain analytical expressions for (HC), which are different from in comparison to those obtained for the HC in the case of normal bulk semiconductor and in the case of cylindrycal quantum wire with electron – unconfined phonons scattering mechanism. Numerical calculations are also applied for AlGaAs/GaAs/AlGaAs cylindrycal quantum wire, we see the HC depends on magnetic field B, temperature T, frequency Ω and amplitude E0 of laser radiation and especially quantum index m1 and m2 characterizing the phonon confinement. This influence is due to the quantum index m1 and m2, which makes an increase of Hall coefficient by 2,3 times in comparition with the case of unconfined phonons. When the quantum number m1 and m2 goes to zero, the result is the same as in the case of unconfined phonons.

Effect of Phonon Confinement on Intersubband Lasing Lifetimes of Si/SiGe Quantum Well Structures

1995 ◽  
Vol 402 ◽  
Author(s):  
L. Friedman ◽  
G. Sun
Keyword(s):  
Optical Phonon ◽  
Population Inversion ◽  
Phonon Scattering ◽  
Energy Difference ◽  
Polar Optical Phonon ◽  
Phonon Confinement ◽  
Quantum Well Structures ◽  
Laser Gain ◽  
Optical Phonon Scattering ◽  
Order Of Magnitude

AbstractThe feasibility of population inversion is studied for the Si/SiGe system. Because of the absence of polar optical phonon scattering, the lifetime difference of the upper and lower lasing levels, to which the population inversion and laser gain are proportional, are an order of magnitude larger than in the III-Vs; nor does this show the large decrease to negative values (loss of population inversion) when the intersuband energy difference exceeds the optical phonon energy. We have investigated the effect of phonon confinement of the Ge-Ge and Si-Ge vibrations on the intersubband scattering rates and find a furthur enhancement of the the intersubband lifetimes as compared to those due to unconfined phonons.

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