COMPARISON OF LOW FIELD ELECTRON TRANSPORT IN SiC AND GaN STRUCTURES FOR HIGH-POWER AND HIGH-TEMPERATURE DEVICE MODELING

Temperature and doping dependencies of electron mobility in SiC and GaN structures have been calculated using an iteravive technique. The following scattering mechanisims, i.e. impurity, polar optical phonon, acoustic phonon, piezoelectric and electron–plasmon are included in the calculation. Ionized imurity scattering has been treated beyond the Born approximation using the phase-shift analysis. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.