The electron-longitudinal optical phonon scattering rate in GaInAsP/InP stepped quantum well

2016 ◽  
Vol 30 (26) ◽  
pp. 1650196 ◽  
Author(s):  
Zheng Li ◽  
Hailong Wang ◽  
Li Chen ◽  
Sha Chen ◽  
Qian Gong
Keyword(s):  
Quantum Well ◽  
Electron Temperature ◽  
Electron Energy ◽  
Longitudinal Optical ◽  
Phonon Energy ◽  
Longitudinal Optical Phonon ◽  
Initial Electron ◽  
Scattering Rate ◽  
The Mean ◽  
Initial Electron Energy

Within the framework of effective mass approximation, the scattering rate via longitudinal optical (LO) phonon emission for an electron and the mean scattering rate via LO phonons emission for electrons initially in the first excited sub-band and finally in the ground sub-band in [Formula: see text] stepped quantum well (QW) is calculated adopting the shooting method and Fermi’s golden rule. The results show that the scattering rate and the mean scattering rate are highly dependent on alloy compositions, well width, initial electron energy, electron temperature and sub-band separation [Formula: see text] between the ground sub-band and the first excited sub-band. When [Formula: see text] is larger than the LO phonon energy, the scattering rate and the mean scattering rate increases with increasing Ga composition, decreasing As composition and increasing well width. However, when [Formula: see text] is smaller than the LO phonon energy, its change tendency is contrary. The scattering rate increases with decreasing initial electron energy if the separation between the initial electron energy and the ground state energy [Formula: see text] is not smaller than the LO phonon energy. The scattering rate and the mean scattering rate increases with rising electron temperature. The mean scattering rate reaches the maximum value when [Formula: see text] is equal to the LO phonon energy. The interruption in the scattering rate happens when the separation between the initial electron energy and [Formula: see text] is smaller than the LO phonon energy. The rapid decrease of the mean scattering rate happens when [Formula: see text] is smaller than the LO phonon energy if [Formula: see text] continues decreasing. In addition, both the scattering rate and the mean scattering rate show little change with different stepped layer widths.

scholarly journals lntersubband Relaxation in Step Quantum Well Structures

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 289-293
Author(s):  
J. P. Sun ◽  
H. B. Teng ◽  
G. I. Haddad ◽  
M. A. Stroscio ◽  
G. J. Iafrate
Keyword(s):  
Quantum Well ◽  
Form Factors ◽  
Phonon Energy ◽  
Longitudinal Optical Phonon ◽  
Relaxation Rates ◽  
Phonon Modes ◽  
Quantum Well Structures ◽  
Bulk Phonon ◽  
Interface Phonons ◽  
Intersubband Relaxation

Intersubband relaxation due to electron interactions with the localized phonon modes plays an important role for population inversion in quantum well laser structures designed for intersubband lasers operating at mid-infrared to submillimeter wavelengths. In this work, intersubband relaxation rates between subbands in step quantum well structures are evaluated numerically using Fermi's golden rule, in which the localized phonon modes including the asymmetric interface modes, symmetric interface modes, and confined phonon modes and the electron – phonon interaction Hamiltonians are derived based on the macroscopic dielectric continuum model, whereas the electron wave functions are obtained by solving the Schrödinger equation for the heterostructures under investigation. The sum rule for the relationship between the form factors of the various localized phonon modes and the bulk phonon modes is examined and verified for these structures. The intersubband relaxation rates due to electron scattering by the asymmetric interface phonons, symmetric interface phonons, and confined phonons are calculated and compared with the relaxation rates calculated using the bulk phonon modes and the Fröhlich interaction Hamiltonian for step quantum well structures with subband separations of 36 meV and 50meV, corresponding to the bulk longitudinal optical phonon energy and interface phonon energy, respectively. Our results show that for preferential electron relaxation in intersubband laser structures, the effects of the localized phonon modes, especially the interface phonon modes, must be included for optimal design of these structures.

scholarly journals Computerized Fdtd Method for Longitudinal Optical Phonon Energy on Semiconductor Hybrid Structure for High Power Devices Fabrication

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Phyo Sandar Win ◽  
Hsu Myat Tin Swe ◽  
Hla Myo Tun
Keyword(s):  
Optical Phonon ◽  
High Performance ◽  
Lattice Vibration ◽  
Longitudinal Optical ◽  
Phonon Energy ◽  
Longitudinal Optical Phonon ◽  
Semiconductor Interface ◽  
Electric Dipoles ◽  
Polarization Of Light ◽  
Transmission And Reflection

The research problem in this study is the longitudinal optical phonon energy on metal/semiconductor interface for high performance semiconductor device. The research solution is to make the software model with finite difference time domain (FDTD) solution for transmission and reflection pulse between metal and semiconductor interface for carrier dynamics effects. The objective of this study is to find the quantum mechanics understanding on interface engineering for fabricating the high performance device for future semiconductor technology development. The analysis was carried out with the help of MATLAB. The quantum mechanical spatial field on metal-semiconductor stripe structure have been analyzed by FDTD techniques. This emission reveals a characteristic polar radiation distribution of electric dipoles and a wavelength independent of the structure size or the direction of emission; consequently, it is attributed to thermally generate electric dipoles resonating with the longitudinal optical phonon energy. Phonon energy occur lattice vibration of material by the polarization of light, if the material has rigid structure reflect back the incident light. So, high reflective metal- semiconductor structure always use as photodectors devices in optical fiber communication. No lattice vibration material structure has no phonon effect, so this structure based devices can get high performance any other structure based devices. The transmission and reflection coefficient of metal-semiconductor GaN/Au layer structure compare with GaN/Ti and GaN/Pt structure. Parallel (P) and transverse (S) polarization of light incident on metal-semiconductor nanolayer structure with IR wavelength. Efficient use of the layer by layer (LbL) method to fabricate nanofilms requires meeting certain conditions and limitations that were revealed in the course of research on model systems.

Scattering Processes with the Emission of Longitudinal Optical Phonons in the Landau Level System In GaAs/AlGaAs Quantum Well

2021 ◽  
Author(s):  
Ngo Vinh Doan The ◽  
Trung Le Canh
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Golden Rule ◽  
Longitudinal Optical ◽  
Optical Phonons ◽  
Scattering Rate ◽  
Quantizing Magnetic Field ◽  
Scattering Time ◽  
The Magnetic Field

Abstract The scattering processes of longitudinal optical phonons in GaAs/AlGaAs quantum wells in a quantizing magnetic field are considered. The time of intrasubband scattering between Landau levels is calculated by using Fermi's golden rule. The dependence of the scattering rate on the magnitude of the magnetic field has been shown and the magnetic field can suppress scattering processes on longitudinal optical phonons. It is found that the scattering time depends linearly on the width of the quantum well.

Longitudinal‐optical‐phonon assisted tunneling in tunneling bi‐quantum well structures

1991 ◽  
Vol 58 (21) ◽  
pp. 2393-2395 ◽  
Author(s):  
Shunichi Muto ◽  
Tsuguo Inata ◽  
Atsushi Tackeuchi ◽  
Yoshihiro Sugiyama ◽  
Toshio Fujii
Keyword(s):  
Quantum Well ◽  
Optical Phonon ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Quantum Well Structures ◽  
Assisted Tunneling
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