TRANSFERRING ELECTRONS ONE BY ONE IN SINGLE ELECTRON DEVICES WITH LONG ARRAYS OF TUNNEL JUNCTIONS

1996 ◽  
Vol 10 (20) ◽  
pp. 2441-2467 ◽  
Author(s):  
G.Y. HU ◽  
R.F. O’CONNELL ◽  
YOUNG BONG KANG ◽  
JAI YON RYU
Keyword(s):  
Free Energy ◽  
Gibbs Free Energy ◽  
Electron Tunneling ◽  
Theoretical Work ◽  
Single Electron ◽  
Single Charge ◽  
One Dimensional ◽  
Recent Theoretical Work ◽  
Single Electron Devices ◽  
Electron Devices

We review recent theoretical work on an analytical approach to the charge dynamics of electron tunneling in single electron devices consisting of long arrays with equal stray capacitances and equal junction capacitances. Our approach to the problem has two basic steps. First, we find the exact solution for the potential profiles and the associated Gibbs free energy, based on a technique for diagonalizing a particular type of a tridiagonal matrix equation. Second, we study the change of the Gibbs free energy arising from single charge transfer. The method has been applied to one-dimensional long arrays, single electron traps, and single electron turnstiles, and the results are compared with that of the existing experiments. We point out the advantages of our method vis-à-vis other approaches used in the literature.

Single-electron devices with granulated film cotunneling suppressors

2006 ◽  
Author(s):  
Alexei Orlov ◽  
Xiangning Luo ◽  
Thomas Kosel ◽  
Gregory Snider
Keyword(s):  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

Silicon single-electron devices

1999 ◽  
Vol 86 (5) ◽  
pp. 605-639 ◽  
Author(s):  
YASUO TAKAHASHI ◽  
AKIRA FUJIWARA ◽  
MASAO NAGASE ◽  
HIDEO NAMATSU ◽  
KENJI KURIHARA ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

Single-electron devices via controlled assembly of designed nanoparticles

1999 ◽  
Vol 47 (1-4) ◽  
pp. 179-183 ◽  
Author(s):  
Tobias Junno ◽  
Martin H. Magnusson ◽  
Sven-Bertil Carlsson ◽  
Knut Deppert ◽  
Jan-Olle Malm ◽  
...  
Keyword(s):  
Single Electron ◽  
Controlled Assembly ◽  
Single Electron Devices ◽  
Electron Devices

scholarly journals Single-electron devices with a mechanical degree of freedom

2012 ◽  
Vol 400 (5) ◽  
pp. 052028
Author(s):  
Yu A Pashkin ◽  
J P Pekola ◽  
D A Knyazev ◽  
T F Li ◽  
S Kafanov ◽  
...  
Keyword(s):  
Degree Of Freedom ◽  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

SINGLE ELECTRON DEVICES

1998 ◽  
Vol 09 (01) ◽  
pp. 165-207 ◽  
Author(s):  
DORAN D. SMITH
Keyword(s):  
Tunnel Junctions ◽  
Electron Flow ◽  
Superconducting Devices ◽  
Time Correlation ◽  
Single Electron ◽  
Net Charge ◽  
Flow Through ◽  
Single Electron Devices ◽  
Electron Devices ◽  
Electron Effects

In the mid 1980s Averin and Likharev predicted that with the use of ultrasmall tunnel junctions a time correlation of electron flow through a junction could be observed, and permit the measurement of the effect of a net charge of less than one electron on the junction. Both effects were soon experimentally verified, and since that time there has been an explosion of work in the filed of single electron devices. This chapter reviews the fundamental concepts behind the operation of such devices. it then describes some of the single electron effects studied in semiconductors. Superconducting devices are then constrasted to the semiconductor and the normal metal single electron devices. The details of some current applications are described, and a thumbnail sketch of current fabrication methods is given.

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