scholarly journals Forward Electron–Phonon Scattering in Normal and Superconducting States

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3083-3086 ◽  
Author(s):  
O. V. Dolgov ◽  
O. V. Danylenko ◽  
M. L. Kulić ◽  
V. Oudovenko
Keyword(s):  
Critical Temperature ◽  
Density Of States ◽  
Phonon Scattering ◽  
Phonon Frequency ◽  
Coupling Constant ◽  
Phonon Coupling ◽  
Superconducting Properties ◽  
Electron Phonon Coupling ◽  
D Wave ◽  
Electron Phonon Scattering

The sharp forward electron–phonon (FEP) and impurity (FIS) scattering change the normal and superconducting properties significantly. The pseudo-gap like features are present in the density of states for ω<Ω, where Ω is the phonon frequency. The superconducting critical temperature T c , due to the FEP pairing, is linear with respect to the electron–phonon coupling constant. The FIS impurities are pair weakening for s- and d-wave pairing.

scholarly journals Electron–Phonon Coupling and Electron–Phonon Scattering in SrVO 3

2021 ◽  
pp. 2004207
Author(s):  
Mathieu Mirjolet ◽  
Francisco Rivadulla ◽  
Premysl Marsik ◽  
Vladislav Borisov ◽  
Roser Valentí ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Electron Phonon Scattering

CROSSOVER FROM 3D TO 2D IN THE ELECTRONIC STRUCTURE OF MgB2-TYPE SYSTEMS

2002 ◽  
Vol 16 (24) ◽  
pp. 3671-3680
Author(s):  
G. Q. HUANG ◽  
M. LIU ◽  
L. F. CHEN
Keyword(s):  
Electronic Structure ◽  
Phonon Frequency ◽  
Three Dimensional ◽  
Type Systems ◽  
Orbital Method ◽  
Full Potential ◽  
Hole Density ◽  
Coupling Constant ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

Using the Stuttgart Full-potential Linearized Muffin-tin Orbital method, we study a crossover of the electronic structure of MgB 2 from three-dimensional (3D) to 2D by artificially increasing the lattice constant along the c-axis. With the inter-layer coupling decreased by increasing c, the density of states (DOS) at E F has a considerable growth; at the same time, the charge transfer from Mg plane to B plane decreases so that the hole density in the B plane increases. As c is increased to 4c0, the electronic structure exhibits 2D characteristic and a van Hove peak in the DOS appears. The E2g phonon frequency at Γ point and the electron–phonon coupling constant λ are estimated by using the frozen phonon method. The calculated results indicate that T c in MgB 2 could be further increased if the inter-layer coupling might be reduced.

ENERGY GAP IN S- AND D-WAVE PAIRING SUPERCONDUCTORS

1988 ◽  
Vol 02 (05) ◽  
pp. 1089-1094 ◽  
Author(s):  
O. V. Dolgov ◽  
A. A. Golubov
Keyword(s):  
Critical Temperature ◽  
Energy Gap ◽  
Coupling Parameter ◽  
Phonon Coupling ◽  
Strong Electron ◽  
Wave Pairing ◽  
Electron Phonon Coupling ◽  
Anisotropic Pairing ◽  
D Wave

The ratio 2Δ g / T c . where Δ g is the gap edge, T c is the critical temperature, is calculated in the framework of the model of strong electron-phonon coupling. Both isotropic and anisotropic pairing cases are considered. It is shown that the isotropic Eliashberg model can not account for the large values of the ratio 2Δ g / T c for the reasonable values of the electron-phonon coupling parameter λ, while anisotropic pairing can resolve this problem.

TWO-COMPONENT ALLOY MODEL FOR BISMUTHATE CERAMICS

1996 ◽  
Vol 10 (14) ◽  
pp. 627-633
Author(s):  
A.L. KUZEMSKY
Keyword(s):  
Transition Temperature ◽  
Strong Coupling ◽  
Concentration Dependence ◽  
Coupling Constant ◽  
Phonon Coupling ◽  
Superconducting Properties ◽  
Disordered Alloys ◽  
Electron Phonon Coupling ◽  
Two Component

The disordered binary substitutional A 1−x B x alloy model has been proposed for the description of the normal and superconducting properties of bismuthate ceramics Ba(Pb,Bi)O 3. The Eliashberg-type equations for the strong coupling superconductivity in strongly disordered alloys have been used to describe the superconducting properties. The relevant configurational averaging has been performed in the framework of CPA. The concentration dependence of electron-phonon coupling constant λ(x) and transition temperature Tc(x) has been calculated.

scholarly journals Estimation of electron-phonon coupling constant in Ba1-xKxBiO3

2020 ◽  
Vol 1686 ◽  
pp. 012049
Author(s):  
Alexander E Lukyanov ◽  
Vyacheslav D Neverov ◽  
Andrey V Krasavin ◽  
Alexey P Menushenkov
Keyword(s):  
Coupling Constant ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

Raman scattering from impurities in semiconductors. II. Special cases

1978 ◽  
Vol 56 (5) ◽  
pp. 560-564
Author(s):  
Robert Barrie ◽  
H. -C. Chow
Keyword(s):  
Raman Scattering ◽  
General Result ◽  
Phonon Scattering ◽  
Phonon Coupling ◽  
Strong Electron ◽  
Impurities In Semiconductors ◽  
Electron Phonon Coupling ◽  
Special Cases ◽  
Weak Electron

Special cases of the general result for Raman scattering from an impurity in a semiconductor are discussed. For weak electron–phonon coupling the zero-phonon and one-phonon scattering intensities are derived. For strong electron–phonon coupling a comparison is made between two different approximations that have been previously used.

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