THE INFLUENCE OF TEMPERATURE AND MAGNETIC FIELD ON THE TUNNELING TRANSPORT IN STM-TIP–NANOTUBE–SUBSTRATE SYSTEMS

2000 ◽  
Vol 14 (30) ◽  
pp. 1065-1072
Author(s):  
GANG ZHANG ◽  
ZHILIANG CAO ◽  
BING-LIN GU
Keyword(s):  
Magnetic Field ◽  
Carbon Nanotube ◽  
Electron Transport ◽  
Electronic Properties ◽  
Scanning Probe ◽  
Single Wall Carbon Nanotube ◽  
Influence Of Temperature ◽  
Single Wall Carbon ◽  
Tunneling Transport

In this paper, we considered a single-wall carbon nanotube (SWNT) deposed on a substrate and probed by a scanning probe. We discuss the influence of magnetic field and temperature on the electronic properties of the SWNTs. From this paper we can see that both temperature and magnetic field are important for electron transport in such systems.

Control of electron transport related defects in in situ fabricated single wall carbon nanotube devices

2006 ◽  
Vol 89 (13) ◽  
pp. 133124 ◽  
Author(s):  
Zhixian Zhou ◽  
R. Jin ◽  
Gyula Eres ◽  
Alaska Subedi ◽  
D. Mandrus
Keyword(s):  
Carbon Nanotube ◽  
Electron Transport ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Carbon Nanotube Devices

scholarly journals Electron Transport in Single-Wall Carbon Nanotube Weak Links in the Fabry-Perot Regime

2006 ◽  
Vol 96 (20) ◽  
Author(s):  
H. I. Jørgensen ◽  
K. Grove-Rasmussen ◽  
T. Novotný ◽  
K. Flensberg ◽  
P. E. Lindelof
Keyword(s):  
Carbon Nanotube ◽  
Electron Transport ◽  
Weak Links ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Fabry Perot

TUNNELING TRANSPORT IN STM-TIP–NANOTUBE–SUBSTRATE SYSTEMS

2000 ◽  
Vol 14 (19) ◽  
pp. 717-724 ◽  
Author(s):  
GANG ZHANG ◽  
ZHILIANG CAO ◽  
BING-LIN GU
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Bias Voltage ◽  
Scanning Probe ◽  
Differential Conductance ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
One Dimensional ◽  
Dimensional Characteristic ◽  
The One

In this paper, we considered a single-wall carbon nanotube deposited on a substrate and probed by a scanning probe. We calculated the current and differential conductance dI/dV versus the bias voltage V in this system. We found that currents through nanotubes become saturated in high voltages. This result shows the one-dimensional characteristic of carbon nanotubes. Our results are consistent with experiments which were carried out in low bias voltage regime and can be tested easily by experiments in higher bias voltage regime.

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