Understanding the effect of vacancy defects on spin transport in CrO2–graphene–CrO2 magnetic tunnel junction

In this paper, we investigate the effect of vacancy defects on spin transport in graphene-based magnetic tunnel junction (MTJ). An increase in conductance was seen in vacancy-defected MTJ structure which is in contrast to the results reported in past where a decrease in conductance with vacancy was observed for graphene sheets. This increase in conductance may be due to the use of CrO2 half-metallic ferromagnet (HMF) electrodes instead of metallic or ferromagnet (FM) electrodes. Furthermore, high tunnel magnetoresistance (TMR) [Formula: see text]99% and perfect spin filtration was obtained for both vacancy-defected and no-defect (pristine) MTJ structures. The TMR in vacancy-defected structure is seen to decrease by 6.2% and by 13% at bias voltages of 1.2[Formula: see text]V and 1.4[Formula: see text]V, when compared to TMR in no-defect MTJ structure.

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High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

IEEE Transactions on Magnetics ◽

10.1109/tmag.2017.2707079 ◽

2017 ◽

Vol 53 (11) ◽

pp. 1-4 ◽

Cited By ~ 2

Author(s):

Jiaqi Zhou ◽

Weisheng Zhao ◽

Shouzhong Peng ◽

Junfeng Qiao ◽

Jacques-Olivier Klein ◽

...

Keyword(s):

Tunnel Junction ◽

First Principles ◽

Magnetic Tunnel Junction ◽

High Tunnel ◽

Tunnel Magnetoresistance ◽

First Principles Study

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CrO2-based heterostructure and magnetic tunnel junction: perfect spin filtering effect, spin diode effect and high tunnel magnetoresistance

RSC Advances ◽

10.1039/c8ra08107g ◽

2019 ◽

Vol 9 (7) ◽

pp. 3550-3557 ◽

Cited By ~ 6

Author(s):

Jiangchao Han ◽

Jimei Shen ◽

Guoying Gao

Keyword(s):

Density Of States ◽

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

High Tunnel ◽

Tunnel Magnetoresistance ◽

Filtering Effect ◽

Spin Diode ◽

Spin Filtering

Spin-dependent device density of states in the CrO2/TiO2/CrO2 magnetic tunnel junction.

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Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance

Nanomaterials ◽

10.3390/nano9091342 ◽

2019 ◽

Vol 9 (9) ◽

pp. 1342 ◽

Cited By ~ 2

Author(s):

Zongbin Chen ◽

Tingzhou Li ◽

Tie Yang ◽

Heju Xu ◽

Rabah Khenata ◽

...

Keyword(s):

Tunnel Junction ◽

Density Functional ◽

Magnetic Tunnel Junction ◽

Linear Type ◽

Ultra Low Power ◽

High Tunnel ◽

Tunnel Magnetoresistance ◽

Spintronic Devices ◽

Potential Applications ◽

Spin Filtering

Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized R 3 − c -type bulk PdF3 compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green’s function for the PdF3/Ga2O3/PdF3 magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 107).

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